Yang, Ning, Hsu, Ting-Hao, Chen, Hung-Yu, Zhao, Jian, Zhang, Hongming, Wang, Han, and Guo, Jing. Van der Waals Heterostructure Engineering for Ultralow-Resistance Contact in 2D Semiconductor P-Type Transistors. Retrieved from https://par.nsf.gov/biblio/10495160. Journal of Electronic Materials 53.4 Web. doi:10.1007/s11664-024-10920-5.

Yang, Ning, Hsu, Ting-Hao, Chen, Hung-Yu, Zhao, Jian, Zhang, Hongming, Wang, Han, & Guo, Jing. Van der Waals Heterostructure Engineering for Ultralow-Resistance Contact in 2D Semiconductor P-Type Transistors. Journal of Electronic Materials, 53 (4). Retrieved from https://par.nsf.gov/biblio/10495160. https://doi.org/10.1007/s11664-024-10920-5

Yang, Ning, Hsu, Ting-Hao, Chen, Hung-Yu, Zhao, Jian, Zhang, Hongming, Wang, Han, and Guo, Jing. "Van der Waals Heterostructure Engineering for Ultralow-Resistance Contact in 2D Semiconductor P-Type Transistors". Journal of Electronic Materials 53 (4). Country unknown/Code not available: Springer. https://doi.org/10.1007/s11664-024-10920-5. https://par.nsf.gov/biblio/10495160.

@article{osti_10495160,
place = {Country unknown/Code not available}, title = {Van der Waals Heterostructure Engineering for Ultralow-Resistance Contact in 2D Semiconductor P-Type Transistors}, url = {https://par.nsf.gov/biblio/10495160}, DOI = {10.1007/s11664-024-10920-5}, abstractNote = {}, journal = {Journal of Electronic Materials}, volume = {53}, number = {4}, publisher = {Springer}, author = {Yang, Ning and Hsu, Ting-Hao and Chen, Hung-Yu and Zhao, Jian and Zhang, Hongming and Wang, Han and Guo, Jing}, }