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  • Analysis of Alternative Baseplate-to-Heatsink Grounding Schemes in 10 kV SiC MOSFET Modules with Series-Connected Devices
Title: Analysis of Alternative Baseplate-to-Heatsink Grounding Schemes in 10 kV SiC MOSFET Modules with Series-Connected Devices
Award ID(s):
2143488
PAR ID:
10500287
Author(s) / Creator(s):
; ; ; ;
Publisher / Repository:
IEEE
Date Published:
ISBN:
978-1-7281-8949-9
Page Range / eLocation ID:
1456 to 1463
Format(s):
Medium: X
Location:
Phoenix, AZ, USA
Sponsoring Org:
National Science Foundation
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