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Tandem photovoltaic (PV) cells with higher efficiency limits than current market dominated crystalline silicon PV devices are poised to be the next generation of solar cells. In this study we focus on analysis of perovskite/Cu(In x Ga 1-x )Se 2 tandem solar cells in the context of real-world conditions. Using material properties and the most recently updated atmospheric data we simulate the device energy yield for locations with different climate conditions. We use the resultant data in calculating module levelized cost and analyze the conditions under which using different forms of tracking become the cost-effective approach at each location.
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Chemically tuned intermediate band states in atomically thin Cu x GeSe/SnS quantum material for photovoltaic applications
A new generation of quantum material derived from intercalating zerovalent atoms such as Cu into the intrinsic van der Waals gap at the interface of atomically thin two-dimensional GeSe/SnS heterostructure is designed, and their optoelectronic features are explored for next-generation photovoltaic applications. Advanced ab initio modeling reveals that many-body effects induce intermediate band (IB) states, with subband gaps (~0.78 and 1.26 electron volts) ideal for next-generation solar devices, which promise efficiency greater than the Shockley-Queisser limit of ~32%. The charge carriers across the heterojunction are both energetically and spontaneously spatially confined, reducing nonradiative recombination and boosting quantum efficiency. Using this IB material in a solar cell prototype enhances absorption and carrier generation in the near-infrared to visible light range. Tuning the active layer’s thickness increases optical activity at wavelengths greater than 600 nm, achieving ~190% external quantum efficiency over a broad solar wavelength range, underscoring its potential in advanced photovoltaic technology.
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- Award ID(s):
- 2202101
- PAR ID:
- 10501540
- Publisher / Repository:
- AAAS
- Date Published:
- Journal Name:
- Science Advances
- Volume:
- 10
- Issue:
- 15
- ISSN:
- 2375-2548
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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