An official website of the United States government
Abstract High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as both active functional materials and thermal management materials. We report an isotropic high thermal conductivity exceeding 500 W m −1 K −1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second highest among large crystals (only surpassed by diamond). Furthermore, the corresponding 3C-SiC thin films are found to have record-high in-plane and cross-plane thermal conductivity, even higher than diamond thin films with equivalent thicknesses. Our results resolve a long-standing puzzle that the literature values of thermal conductivity for 3C-SiC are lower than the structurally more complex 6H-SiC. We show that the observed high thermal conductivity in this work arises from the high purity and high crystal quality of 3C-SiC crystals which avoids the exceptionally strong defect-phonon scatterings. Moreover, 3C-SiC is a SiC polytype which can be epitaxially grown on Si. We show that the measured 3C-SiC-Si thermal boundary conductance is among the highest for semiconductor interfaces. These findings provide insights for fundamental phonon transport mechanisms, and suggest that 3C-SiC is an excellent wide-bandgap semiconductor for applications of next-generation power electronics as both active components and substrates.
more »
« less
Probe beam deflection technique with liquid immersion for fast mapping of thermal conductance
Frequency-domain probe beam deflection (FD-PBD) is an experimental technique for measuring thermal properties that combines heating by a modulated pump laser and measurement of the temperature field via thermoelastic displacement of the sample surface. In the conventional implementation of FD-PBD, the data are mostly sensitive to the in-plane thermal diffusivity. We describe an extension of FD-PBD that introduces sensitivity to through-plane thermal conductance by immersing the sample in a dielectric liquid and measuring the beam deflection created by the temperature field of the liquid. We demonstrate the accuracy of the method by measuring (1) the thermal conductivity of a 310 nm thick thermally grown oxide on Si, (2) the thermal boundary conductance of bonded interface between a 3C-SiC film and a single crystal diamond substrate, and (3) the thermal conductivities of several bulk materials. We map the thermal boundary conductance of a 3C-SiC/diamond interface with a precision of 1% using a lock-in time constant of 3 ms and dwell time of 15 ms. The spatial resolution and maximum probing depth are proportional to the radius of the focused laser beams and can be varied over the range of 1–20 μm and 4–80 μm, respectively, by varying the 1/e2 intensity radius of the focused laser beams from 2 to 40 μm. FD-PBD with liquid immersion thus enables fast mapping of spatial variations in thermal boundary conductance of deeply buried interfaces.
more »
« less
- Award ID(s):
- 1720633
- PAR ID:
- 10502483
- Publisher / Repository:
- AIP
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 124
- Issue:
- 4
- ISSN:
- 0003-6951
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are essential components in modern radio frequency power amplifiers. In order to improve both the device electrical and thermal performance (e.g., higher current density operation and better heat dissipation), researchers are introducing AlN into the GaN HEMT structure. The knowledge of thermal properties of the constituent layers, substrates, and interfaces is crucial for designing and optimizing GaN HEMTs that incorporate AlN into the device structure as the barrier layer, buffer layer, and/or the substrate material. This study employs a multi-frequency/spot-size time-domain thermoreflectance approach to measure the anisotropic thermal conductivity of (i) AlN and GaN epitaxial films, (ii) AlN and SiC substrates, and (iii) the thermal boundary conductance for GaN/AlN, AlN/SiC, and GaN/SiC interfaces (as a function of temperature) by characterizing GaN-on-SiC, GaN-on-AlN, and AlN-on-SiC epitaxial wafers. The thermal conductivity of both AlN and GaN films exhibits an anisotropy ratio of ∼1.3, where the in-plane thermal conductivity of a ∼1.35 μm thick high quality GaN layer (∼223 W m−1 K−1) is comparable to that of bulk GaN. A ∼1 μm thick AlN film grown by metalorganic chemical vapor deposition possesses a higher thermal conductivity than a thicker (∼1.4 μm) GaN film. The thermal boundary conductance values for a GaN/AlN interface (∼490 MW m-2 K−1) and AlN/SiC interface (∼470 MW m−2 K−1) are found to be higher than that of a GaN/SiC interface (∼305 MW m−2 K−1). This work provides thermophysical property data that are essential for optimizing the thermal design of AlN-incorporated GaN HEMT devices.more » « less
-
Abstract An in situ double probe beam deflection (PBD) technique has been developed using two laser beams to map the concentration profile of the diffusion layer in an electrochemical cell. A microscale moving upper probe and a fixed position secondary beam offer real-time concentration gradients to be profiled throughout the depth of the diffusion layer. The double PBD technique was used to plot concentration profiles for 0.1 mol/kg CuSO4 and ZnSO4 within a range of applied currents, showing increased magnitudes of gradients for higher currents. Both single and double beam PBD were explored, demonstrating the distance and time dependence of the developing concentration gradient. While CuSO4 showed a systematic trend of increased response delay and decreased deflection with increased distance from the electrode, ZnSO4 experienced some additional phenomena affecting the refractive index within the diffusion layer. The in situ double probe beam deflection was shown to be highly sensitive and offers future work in quantifying charge migration within this important region of the electrochemical cell.more » « less
-
null (Ed.)Liquid–solid interface energy transport has been a long-term research topic. Past research mostly focused on theoretical studies while there are only a handful of experimental reports because of the extreme challenges faced in measuring such interfaces. Here, by constructing nanosecond energy transport state-resolved Raman spectroscopy (nET-Raman), we characterize thermal conductance across a liquid–solid interface: water–WS 2 nm film. In the studied system, one side of a nm-thick WS 2 film is in contact with water and the other side is isolated. WS 2 samples are irradiated with 532 nm wavelength lasers and their temperature evolution is monitored by tracking the Raman shift variation in the E 2g mode at several laser powers. Steady and transient heating states are created using continuous wave and nanosecond pulsed lasers, respectively. We find that the thermal conductance between water and WS 2 is in the range of 2.5–11.8 MW m −2 K −1 for three measured samples (22, 33, and 88 nm thick). This is in agreement with molecular dynamics simulation results and previous experimental work. The slight differences are attributed mostly to the solid–liquid interaction at the boundary and the surface energies of different solid materials. Our detailed analysis confirms that nET-Raman is very robust in characterizing such interface thermal conductance. It completely eliminates the need for laser power absorption and Raman temperature coefficients, and is insensitive to the large uncertainties in 2D material properties input.more » « less
-
Time-domain thermoreflectance and frequency-domain thermoreflectance (FDTR) have been widely used for non-contact measurement of anisotropic thermal conductivity of materials with high spatial resolution. However, the requirement of a high thermoreflectance coefficient restricts the choice of metal coating and laser wavelength. The accuracy of the measurement is often limited by the high sensitivity to the radii of the laser beams. We describe an alternative frequency-domain pump-probe technique based on probe beam deflection. The beam deflection is primarily caused by thermoelastic deformation of the sample surface, with a magnitude determined by the thermal expansion coefficient of the bulk material to measure. We derive an analytical solution to the coupled elasticity and heat diffusion equations for periodic heating of a multilayer sample with anisotropic elastic constants, thermal conductivity, and thermal expansion coefficients. In most cases, a simplified model can reliably describe the frequency dependence of the beam deflection signal without knowledge of the elastic constants and thermal expansion coefficients of the material. The magnitude of the probe beam deflection signal is larger than the maximum magnitude achievable by thermoreflectance detection of surface temperatures if the thermal expansion coefficient is greater than 5 × 10 −6 K −1 . The uncertainty propagated from laser beam radii is smaller than that in FDTR when using a large beam offset. We find a nearly perfect matching of the measured signal and model prediction, and measure thermal conductivities within 6% of accepted values for materials spanning the range of polymers to gold, 0.1–300 W/(m K).more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1063/5.0179581
