skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Impact of strain on the SOT-driven dynamics of thin film Mn3Sn
Mn 3 Sn, a metallic antiferromagnet with an anti-chiral 120° spin structure, generates intriguing magneto-transport signatures such as a large anomalous Hall effect, spin-polarized current with novel symmetries, anomalous Nernst effect, and magneto-optic Kerr effect. When grown epitaxially as MgO(110)[001]∥Mn3Sn(01¯1¯0)[0001], Mn3Sn experiences a uniaxial tensile strain, which changes the bulk sixfold anisotropy to a twofold perpendicular magnetic anisotropy (PMA). Here, we investigate the field-assisted spin–orbit-torque (SOT)-driven dynamics in single-domain Mn3Sn with PMA. We find that for non-zero external magnetic fields, the magnetic octupole moment of Mn3Sn can be switched between the two stable states if the input current is between two field-dependent critical currents. Below the lower critical current, the magnetic octupole moment exhibits a stationary state in the vicinity of the initial stable state. On the other hand, above the higher critical current, the magnetic octupole moment shows oscillatory dynamics which could, in principle, be tuned from the 100s of megahertz to the terahertz range. We obtain approximate analytic expressions of the two critical currents that agree very well with the numerical simulations for experimentally relevant magnetic fields. We also obtain a unified functional form of the switching time vs the input current for different magnetic fields. Finally, we show that for lower values of Gilbert damping (α≲2×10−3), the critical currents and the final steady states depend significantly on α. The numerical and analytic results presented in our work can be used by both theorists and experimentalists to understand the SOT-driven order dynamics in PMA Mn3Sn and design future experiments and devices.  more » « less
Award ID(s):
1720633
PAR ID:
10502489
Author(s) / Creator(s):
; ;
Publisher / Repository:
AIP
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
135
Issue:
12
ISSN:
0021-8979
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. We numerically investigate and develop analytic models for both the DC and pulsed spin–orbit-torque (SOT)-driven response of order parameter in single-domain Mn3Sn, which is a metallic antiferromagnet with an anti-chiral 120° spin structure. We show that DC currents above a critical threshold can excite oscillatory dynamics of the order parameter in the gigahertz to terahertz frequency spectrum. Detailed models of the oscillation frequency vs input current are developed and found to be in excellent agreement with the numerical simulations of the dynamics. In the case of pulsed excitation, the magnetization can be switched from one stable state to any of the other five stable states in the Kagome plane by tuning the duration or the amplitude of the current pulse. Precise functional forms of the final switched state vs the input current are derived, offering crucial insights into the switching dynamics of Mn3Sn. The readout of the magnetic state can be carried out via either the anomalous Hall effect or the recently demonstrated tunneling magnetoresistance in an all-Mn3Sn junction. We also discuss possible disturbance of the magnetic order due to heating that may occur if the sample is subject to large currents. Operating the device in a pulsed mode or using low DC currents reduces the peak temperature rise in the sample due to Joule heating. Our predictive modeling and simulation results can be used by both theorists and experimentalists to explore the interplay of SOT and the order dynamics in Mn3Sn and to further benchmark the device performance. 
    more » « less
  2. Abstract Antiferromagnets (AFMs) have the natural advantages of terahertz spin dynamics and negligible stray fields, thus appealing for use in domain-wall applications. However, their insensitive magneto-electric responses make controlling them in domain-wall devices challenging. Recent research on noncollinear chiral AFMs Mn3X (X = Sn, Ge) enabled us to detect and manipulate their magnetic octupole domain states. Here, we demonstrate a current-driven fast magnetic octupole domain-wall (MODW) motion in Mn3X. The magneto-optical Kerr observation reveals the Néel-like MODW of Mn3Ge can be accelerated up to 750 m s-1with a current density of only 7.56 × 1010A m-2without external magnetic fields. The MODWs show extremely high mobility with a small critical current density. We theoretically extend the spin-torque phenomenology for domain-wall dynamics from collinear to noncollinear magnetic systems. Our study opens a new route for antiferromagnetic domain-wall-based applications. 
    more » « less
  3. Abstract Employing the probabilistic nature of unstable nano-magnet switching has recently emerged as a path towards unconventional computational systems such as neuromorphic or Bayesian networks. In this letter, we demonstrate proof-of-concept stochastic binary operation using hard axis initialization of nano-magnets and control of their output state probability (activation function) by means of input currents. Our method provides a natural path towards addition of weighted inputs from various sources, mimicking the integration function of neurons. In our experiment, spin orbit torque (SOT) is employed to “drive” nano-magnets with perpendicular magnetic anisotropy (PMA) -to their metastable state, i.e. in-plane hard axis. Next, the probability of relaxing into one magnetization state (+mi) or the other (−mi) is controlled using an Oersted field generated by an electrically isolated current loop, which acts as a “charge” input to the device. The final state of the magnet is read out by the anomalous Hall effect (AHE), demonstrating that the magnetization can be probabilistically manipulated and output through charge currents, closing the loop from charge-to-spin and spin-to-charge conversion. Based on these building blocks, a two-node directed network is successfully demonstrated where the status of the second node is determined by the probabilistic output of the previous node and a weighted connection between them. We have also studied the effects of various magnetic properties, such as magnet size and anisotropic field on the stochastic operation of individual devices through Monte Carlo simulations of Landau Lifshitz Gilbert (LLG) equation. The three-terminal stochastic devices demonstrated here are a critical step towards building energy efficient spin based neural networks and show the potential for a new application space. 
    more » « less
  4. null (Ed.)
    We adapt Sagnac interferometry for magneto-optic Kerr effect measurements of spin-orbit-torque-induced magnetic tilting in thin-film magnetic samples. The high sensitivity of Sagnac interferometry permits for the first time optical quantification of spin-orbit torque from small-angle magnetic tilting of samples with perpendicular magnetic anisotropy (PMA). We find significant disagreement between Sagnac measurements and simultaneously-performed harmonic Hall (HH) measurements of spin-orbit torque on Pt/Co/MgO and Pd/Co/MgO samples with PMA. The Sagnac results for PMA samples are consistent with both HH and Sagnac measurements for the in-plane geometry, so we conclude that the conventional analysis framework for PMA HH measurements is flawed. We suggest that the explanation for this discrepancy is that although magnetic-field induced magnetic tilting in PMA samples can produce a strong planar Hall effect, when tilting is instead generated by spin-orbit torque it produces negligible change in the planar Hall signal. This very surprising result demonstrates an error in the most-popular method for measuring spin-orbit torques in PMA samples, and represents an unsolved puzzle in understanding the planar Hall effect in magnetic thin films. 
    more » « less
  5. Abstract Voltage‐Gated Spin‐Orbit‐Torque (VGSOT) Magnetic Random‐Access Memory (MRAM) is a promising candidate for reducing writing energy and improving writing speed in emerging memory and in‐memory computing applications. However, conventional Voltage Controlled Magnetic Anisotropy (VCMA) approaches are often inefficient due to the low VCMA coefficient at the CoFeB/MgO interface. Additionally, traditional heavy metal/perpendicular magnetic anisotropy (PMA) ferromagnet bilayers require an external magnetic field to overcome symmetry constraints and achieve deterministic SOT switching. Here, a novel and industry‐compatible SOT underlayer for next‐generation VGSOT MRAM by employing a composite heavy metal tri‐layer with a high work function is presented. This approach achieves a VCMA coefficient exceeding 100 fJ V−1m−1through electron depletion effects, which is ten times larger than that observed with a pure W underlayer. Furthermore, it is demonstrated that this composite heavy metal SOT underlayer facilitates the integration of VCMA with opposite spin Hall angles, enabling field‐free SOT switching in industry‐compatible PMA CoFeB/MgO systems. 
    more » « less