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Title: Full band Monte Carlo simulation of AlInAsSb digital alloys
Abstract Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this article, we investigate the band structure‐related mechanisms that influence impact ionization. Band‐structures calculated using an empirical tight‐binding method and Monte Carlo simulations reveal that the mini‐gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated. image  more » « less
Award ID(s):
1842641
PAR ID:
10504597
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ;
Publisher / Repository:
InfoMat published by John Wiley & Sons Australia, Ltd on behalf of UESTC.
Date Published:
Journal Name:
InfoMat
Volume:
2
Issue:
6
ISSN:
2567-3165
Page Range / eLocation ID:
1236 to 1240
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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