An official website of the United States government
van der Waals (vdW) magnetic materials show promise in being the foundation for future spintronic technology. The magnetic behavior of Fe2.7GeTe2 (FGT), a vdW itinerant ferromagnet, was investigated before and after proton irradiation. Proton irradiation of the sample was carried out at a fluence of 1×1018 cm-2. The magnetization measurements revealed a small increase of saturation magnetization (Ms) of about 4% upon proton irradiation of the sample, in which, the magnetic field was applied parallel to the c-axis. X-ray photoelectron spectroscopy for pristine and irradiated FGT revealed a general decrease in intensity after irradiation for Ge and Te and an increase in peak intensity of unavoidable surface iron oxide. Furthermore, no noticeable change in the Curie temperature (TC =152 K) is observed in temperature dependent magnetization variation. This work signifies the importance of employing protons in tuning the magnetic properties of vdW materials.
more »
« less
Proton-fluence dependent magnetic properties of exfoliable quasi-2D van der Waals Cr 2 Si 2 Te 6 magnet
Abstract The discovery of long-range magnetic ordering in atomically thin materials catapulted the van der Waals (vdW) family of compounds into an unprecedented popularity, leading to potentially important technological applications in magnetic storage and magneto-transport devices, as well as photoelectric sensors. With the potential for the use of vdW materials in space exploration technologies it is critical to understand how the properties of such materials are affected by ionizing proton irradiation. Owing to their robust intra-layer stability and sensitivity to external perturbations, these materials also provide excellent opportunities for studying proton irradiation as a non-destructive tool for controlling their magnetic properties. Specifically, the exfoliable Cr2Si2Te6(CST) is a ferromagnetic semiconductor with the Curie temperature (TC) of ∼32 K. Here, we have investigated the magnetic properties of CST upon proton irradiation as a function of fluence (1 × 1015, 5 × 1015, 1 × 1016, 5 × 1016, and 1 × 1018H+/cm−2) by employing variable-temperature, variable-field magnetization measurements, and detail how the magnetization, magnetic anisotropy vary as a function of proton fluence across the magnetic phase transition. While theTCremains constant as a function of proton fluence, we observed that the saturation magnetization and magnetic anisotropy diverge at the proton fluence of 5 × 1016H+/cm−2, which is prominent in the ferromagnetic phase, in particular.This work demonstrates that proton irradiation is a feasible method for modifying the magnetic properties and local magnetic interactions of vdWs crystals, which represents a significant step forward in the design of future spintronic and magneto-electronic applications.
more »
« less
- PAR ID:
- 10510081
- Publisher / Repository:
- IOP
- Date Published:
- Journal Name:
- Journal of Physics: Condensed Matter
- Volume:
- 36
- Issue:
- 22
- ISSN:
- 0953-8984
- Page Range / eLocation ID:
- 225801
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Abstract 17 MeV proton irradiation at fluences from 3–7 × 1013cm−2of vertical geometry NiO/β-Ga2O3heterojunction rectifiers produced carrier removal rates in the range 120–150 cm−1in the drift region. The forward current density decreased by up to 2 orders of magnitude for the highest fluence, while the reverse leakage current increased by a factor of ∼20. Low-temperature annealing methods are of interest for mitigating radiation damage in such devices where thermal annealing is not feasible at the temperatures needed to remove defects. While thermal annealing has previously been shown to produce a limited recovery of the damage under these conditions, athermal annealing by minority carrier injection from NiO into the Ga2O3has not previously been attempted. Forward bias annealing produced an increase in forward current and a partial recovery of the proton-induced damage. Since the minority carrier diffusion length is 150–200 nm in proton irradiated Ga2O3, recombination-enhanced annealing of point defects cannot be the mechanism for this recovery, and we suggest that electron wind force annealing occurs.more » « less
-
Microstructural changes induced by helium implantation in materials lead to volumetric swelling and mechanical property changes. How these properties are linked and establishing direct relationships can be difficult due to the underlying material’s microstructure evolution. Some materials also experience a phase change due to irradiation damage making them even more complex to analyze. Here, single crystalline Si (100) was used to establish a relationship among these parameters. The swelling height as a function of implantation fluence can equally fit a linear relationship. Solely irradiation induced defects are observed at low fluence below 5.0 × 10 16 ions/cm 2 . An abrupt amorphous and crystalline mixed layer of ∼200 nm thick within a highly damaged polycrystalline matrix is observed when implantation fluence exceeds 5.0 × 10 16 ions/cm 2 , leading to the appearance of irradiation induced swelling and hardening behavior. As the fluence increases beyond 1.0 × 10 17 ions/cm 2 , the amorphous layer expands in size and the bubble size distribution takes the form of a Gaussian distribution with a maximum size of up to 6.4 nm, which causes a further increase in the height of swelling. Furthermore, irradiation induced softening appeared due to the enlarged bubble size and amorphization.more » « less
-
Abstract The Large Hadron Collider at CERN will undergo an upgrade in order to increase its luminosity to 7.5 × 1034cm-2s-1. The increased luminosity during this High-Luminosity running phase, starting around 2029, means a higher rate of proton-proton interactions, hence a larger ionizing dose and particle fluence for the detectors. The current tracking system of the CMS experiment will be fully replaced in order to cope with the new operating conditions. Prototype planar pixel sensors for the CMS Inner Tracker with square 50 μm × 50 μm and rectangular 100 μm × 25 μm pixels read out by the RD53A chip were characterized in the lab and at the DESY-II testbeam facility in order to identify designs that meet the requirements of CMS during the High-Luminosity running phase. A spatial resolution of approximately 3.4 μm (2 μm) is obtained using the modules with 50 μm × 50 μm (100 μm × 25 μm) pixels at the optimal angle of incidence before irradiation. After irradiation to a 1 MeV neutron equivalent fluence of Φeq = 5.3 × 1015 cm-2, a resolution of 9.4 μm is achieved at a bias voltage of 800 V using a module with 50 μm × 50 μm pixel size. All modules retain a hit efficiency in excess of 99% after irradiation to fluences up to 2.1 × 1016 cm-2. Further studies of the electrical properties of the modules, especially crosstalk, are also presented in this paper.more » « less
-
We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014cm−2) Si-dopedβ-Ga2O3Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 °C to 289 nm at 120 °C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhancesLfrom 330 nm to 726 nm at room temperature. The rate of increase forLis lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-dopedβ-Ga2O3Schottky rectifiers is presented.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1088/1361-648X/ad27ff
