More Like this

1. Resistive switching in Si ₂ Te ₃ nanowires

   https://doi.org/10.1063/1.5060675  

   Wu, Keyue; Chen, Jiyang; Shen, Xiao; Cui, Jingbiao (December 2018, AIP Advances)
2. Proton-fluence dependent magnetic properties of exfoliable quasi-2D van der Waals Cr ₂ Si ₂ Te ₆ magnet

   https://doi.org/10.1088/1361-648X/ad27ff  

   Iturriaga, Hector; Chen, Ju; Yang, Jing; Martinez, Luis M; Shao, Lin; Liu, Yu; Petrovic, Cedomir; Kirk, Martin; Singamaneni, Srinivasa R (March 2024, Journal of Physics: Condensed Matter)

   Abstract The discovery of long-range magnetic ordering in atomically thin materials catapulted the van der Waals (vdW) family of compounds into an unprecedented popularity, leading to potentially important technological applications in magnetic storage and magneto-transport devices, as well as photoelectric sensors. With the potential for the use of vdW materials in space exploration technologies it is critical to understand how the properties of such materials are affected by ionizing proton irradiation. Owing to their robust intra-layer stability and sensitivity to external perturbations, these materials also provide excellent opportunities for studying proton irradiation as a non-destructive tool for controlling their magnetic properties. Specifically, the exfoliable Cr₂Si₂Te₆(CST) is a ferromagnetic semiconductor with the Curie temperature (T_C) of ∼32 K. Here, we have investigated the magnetic properties of CST upon proton irradiation as a function of fluence (1 × 10¹⁵, 5 × 10¹⁵, 1 × 10¹⁶, 5 × 10¹⁶, and 1 × 10¹⁸H⁺/cm⁻²) by employing variable-temperature, variable-field magnetization measurements, and detail how the magnetization, magnetic anisotropy vary as a function of proton fluence across the magnetic phase transition. While theT_Cremains constant as a function of proton fluence, we observed that the saturation magnetization and magnetic anisotropy diverge at the proton fluence of 5 × 10¹⁶H⁺/cm⁻², which is prominent in the ferromagnetic phase, in particular.This work demonstrates that proton irradiation is a feasible method for modifying the magnetic properties and local magnetic interactions of vdWs crystals, which represents a significant step forward in the design of future spintronic and magneto-electronic applications. 

   more » « less
3. Probing the dynamics of photoexcited carriers in Si ₂ Te ₃ nanowires

   https://doi.org/10.1063/1.5053932  

   Chen, Jiyang; Wu, Keyue; Shen, Xiao; Hoang, Thang Ba; Cui, Jingbiao (January 2019, Journal of Applied Physics)
4. Spin filtering effect in intrinsic 2D magnetic semiconductor Cr ₂ Ge ₂ Te ₆

   https://doi.org/10.1063/5.0102745  

   Feng, Honglei; Shi, Gang; Yan, Dayu; Li, Yong; Shi, Youguo; Xu, Yang; Xiong, Peng; Li, Yongqing (October 2022, Applied Physics Letters)

   All van der Waals Fe 3 GeTe 2 /Cr 2 Ge 2 Te 6 /graphite magnetic heterojunctions have been fabricated via mechanical exfoliation and stacking, and their magnetotransport properties are studied in detail. At low bias voltages, large negative junction magnetoresistances have been observed and are attributed to spin-conserving tunneling transport across an insulating Cr 2 Ge 2 Te 6 layer. With increasing bias, a crossover to Fowler–Nordheim tunneling takes place. The negative sign of the tunneling magnetoresistance suggests that the bottom of a conduction band in Cr 2 Ge 2 Te 6 belongs to minority spins, opposite to the findings of some first-principles calculations. This work shows that the vdW heterostructures based on 2D magnetic insulators are a valuable platform to gain further insight into spin polarized tunneling transport, which is the basis for pursuing high performance spintronic devices and a large variety of quantum phenomena. 

   more » « less
5. Structure and photoluminescence study of silicon based two-dimensional Si ₂ Te ₃ nanostructures

   https://doi.org/10.1063/1.4998811  

   Wu, Keyue; Sun, Weiwei; Jiang, Yan; Chen, Jiyang; Li, Li; Cao, Chunbin; Shi, Shiwei; Shen, Xiao; Cui, Jingbiao (August 2017, Journal of Applied Physics)