Zhang, Fan, He, Wangxin, Yeo, Injune, Liehr, Maximilian, Cady, Nathaniel, Cao, Yu, Seo, Jae-Sun, and Fan, Deliang. A 65nm RRAM Compute-in-Memory Macro for Genome Sequencing Alignment. IEEE European Solid State Circuits Conference (ESSCIRC) . Web. doi:10.1109/ESSCIRC59616.2023.10268783.

Zhang, Fan, He, Wangxin, Yeo, Injune, Liehr, Maximilian, Cady, Nathaniel, Cao, Yu, Seo, Jae-Sun, & Fan, Deliang. A 65nm RRAM Compute-in-Memory Macro for Genome Sequencing Alignment. IEEE European Solid State Circuits Conference (ESSCIRC), (). https://doi.org/10.1109/ESSCIRC59616.2023.10268783

Zhang, Fan, He, Wangxin, Yeo, Injune, Liehr, Maximilian, Cady, Nathaniel, Cao, Yu, Seo, Jae-Sun, and Fan, Deliang. "A 65nm RRAM Compute-in-Memory Macro for Genome Sequencing Alignment". IEEE European Solid State Circuits Conference (ESSCIRC) (). Country unknown/Code not available: IEEE. https://doi.org/10.1109/ESSCIRC59616.2023.10268783. https://par.nsf.gov/biblio/10511034.

@article{osti_10511034,
place = {Country unknown/Code not available}, title = {A 65nm RRAM Compute-in-Memory Macro for Genome Sequencing Alignment}, url = {https://par.nsf.gov/biblio/10511034}, DOI = {10.1109/ESSCIRC59616.2023.10268783}, abstractNote = {}, journal = {IEEE European Solid State Circuits Conference (ESSCIRC)}, publisher = {IEEE}, author = {Zhang, Fan and He, Wangxin and Yeo, Injune and Liehr, Maximilian and Cady, Nathaniel and Cao, Yu and Seo, Jae-Sun and Fan, Deliang}, }