Abstract Two‐dimensional coordination polymers (2DCPs) have been predicted to exhibit exotic properties such as superconductivity, topological insulating behavior, catalytic activity, and superior ion transport for energy applications; experimentally, these materials have fallen short of their expectation due to the lack of synthesis protocols that yield continuous, large crystallite domains, and highly ordered thin films with controllable physical and chemical properties. Herein, the fabrication of large‐area, highly ordered 2DCP thin films with large crystallite domains using chemical vapor deposition (CVD) approaches is described. It is demonstrated that defects and the packing motifs of 2DCP thin films may be controlled by adjusting the vapor–vapor and vapor–solid interactions of the metal and organic linker precursors during the CVD fabrication process. Such control allows for the fabrication of defects‐controlled 2DCP thin films that show either semiconducting or metallic behavior. The findings provide the first demonstration of tuning the electrical properties of sub 100 nm‐thick continuous 2DCP thin films by controlling their electronic landscape through defect engineering. As such, it is determined that large‐area, highly ordered 2DCP thin films may undergo a semiconducting to metallic transition that is correlated to changes in morphology, crystalline domain sizes, crystallite orientation, defect interactions, and electronic structure.
more »
« less
Screening for electrically conductive defects in thin functional films using electrochemiluminescence
Multifunctional thin films in energy-related devices often must be electrically insulating where a single nanoscale defect can result in complete device-scale failure. Locating and characterizing such defects presents a fundamental problem where high-resolution imaging methods are needed to find defects, but imaging with high spatial resolution limits the field of view and thus the measurement throughput. Here, we present a novel high-throughput method for detecting sub-micron defects in insulating thin films by leveraging the electrochemiluminescence (ECL) of luminol. Through a systematic study of reagent concentrations, buffers, voltage, and excitation time, we identify optimized conditions at which it is possible to detect sub-micron defects at high-throughput. Extrapolating from the signal to background observed for detecting 440 nm wide lines and 620 nm diameter circles, we estimate the minimum detectable features to be lines as narrow as 2.5 nm in width and pinholes as small as 70 nm in radius. We further explore this method by using it to characterize a nominally insulating phenol film and find conductive defects that are cross-correlated with high-resolution atomic force microscopy to provide feedback to synthesis. Given this assay’s inherent parallelizability and scalability, it is expected to have a major impact on the automated discovery of multifunctional films.
more »
« less
- Award ID(s):
- 2146597
- PAR ID:
- 10514657
- Publisher / Repository:
- Royal Society of Chemistry
- Date Published:
- Journal Name:
- Analytical Methods
- Volume:
- 15
- Issue:
- 29
- ISSN:
- 1759-9660
- Page Range / eLocation ID:
- 3592 - 3600
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
We review the recent advances in thermal characterization of micro/nanoscale electronic, optoelectronic, thermal devices based on thermoreflectance imaging. Thermoreflectance imaging is a non-invasive optical technique that can visualize surface thermal response of devices and integrated circuits (IC). Recent advances of the technique have enabled high-resolution, ultra-fast transient thermal imaging with 800 ps temporal resolution. Using visible or UV illumination, spatial resolution of about 200-250 nm can be achieved. Many IC substrates, e.g. Si, GaAs, are transparent to near IR illumination in 1-1.5 μm wavelength range. Through-substrate thermal imaging of flip-chip bonded ICs with micron spatial resolution has been demonstrated. We provide key examples of various devices characterized by the technique such as CMOS ICs, GaN HEMT, nanowire transistors, thin-film solar cells, and micro-thermal cloaking devices. In addition to the validation of electrothermal models, material and fabrication defects can be identified. Finally we discuss the advantages/limitations, and perspective of thermoreflectance imaging technique.more » « less
-
null (Ed.)Abstract Disorder arising from random locations of charged donors and acceptors introduces localization and diffusive motion that can lead to constructive electron interference and positive magnetoconductivity. At very low temperatures, 3D theory predicts that the magnetoconductivity is independent of temperature or material properties, as verified for many combinations of thin-films and substrates. Here, we find that this prediction is apparently violated if the film thickness d is less than about 300 nm. To investigate the origin of this apparent violation, the magnetoconductivity was measured at temperatures T = 15 – 150 K in ten, Sn-doped In 2 O 3 films with d = 13 – 292 nm, grown by pulsed laser deposition on fused silica. We observe a very strong thickness dependence which we explain by introducing a theory that postulates a second source of disorder, namely, non-uniform interface-induced defects whose number decreases exponentially with the interface distance. This theory obeys the 3D limit for the thickest samples and yields a natural figure of merit for interface disorder. It can be applied to any degenerate semiconductor film on any semi-insulating substrate.more » « less
-
null (Ed.)Abstract There is demand for scaling up 3D printing throughput, especially for the multi-photon 3D printing process that provides sub-micrometer structuring capabilities required in diverse fields. In this work, high-speed projection multi-photon printing is combined with spatiotemporal focusing for fabrication of 3D structures in a rapid, layer-by-layer, and continuous manner. Spatiotemporal focusing confines printing to thin layers, thereby achieving print thicknesses on the micron and sub-micron scale. Through projection of dynamically varying patterns with no pause between patterns, a continuous fabrication process is established. A numerical model for computing spatiotemporal focusing and imaging is also presented which is verified by optical imaging and printing results. Complex 3D structures with smooth features are fabricated, with millimeter scale printing realized at a rate above 10 −3 mm 3 s −1 . This method is further scalable, indicating its potential to make fabrications of 3D structures with micro/nanoscale features in a practical time scale a reality.more » « less
-
Abstract The large‐scale growth of semiconducting thin films on insulating substrates enables batch fabrication of atomically thin electronic and optoelectronic devices and circuits without film transfer. Here an efficient method to achieve rapid growth of large‐area monolayer MoSe2films based on spin coating of Mo precursor and assisted by NaCl is reported. Uniform monolayer MoSe2films up to a few inches in size are obtained within a short growth time of 5 min. The as‐grown monolayer MoSe2films are of high quality with large grain size (up to 120 µm). Arrays of field‐effect transistors are fabricated from the MoSe2films through a photolithographic process; the devices exhibit high carrier mobility of ≈27.6 cm2V–1s–1and on/off ratios of ≈105. The findings provide insight into the batch production of uniform thin transition metal dichalcogenide films and promote their large‐scale applications.more » « less
An official website of the United States government

