Ceramic materials provide outstanding chemical and structural stability at high temperatures and in hostile environments but are susceptible to catastrophic fracture that severely limits their applicability. Traditional approaches to partially overcome this limitation rely on activating toughening mechanisms during crack growth to postpone fracture. Here, we demonstrate a more potent toughening mechanism that involves an intriguing possibility of healing the cracks as they form, even at room temperature, in an atomically layered ternary carbide. Crystals of this class of ceramic materials readily fracture along weakly bonded crystallographic planes. However, the onset of an abstruse mode of deformation, referred to as kinking in these materials, induces large crystallographic rotations and plastic deformation that physically heal the cracks. This implies that the toughness of numerous other layered ceramic materials, whose broader applications have been limited by their susceptibility to catastrophic fracture, can also be enhanced by microstructural engineering to promote kinking and crack-healing.
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This content will become publicly available on November 1, 2024
Engineering the fracture resistance of 2H-transition metal dichalcogenides using vacancies - An in-silico investigation based on HRTEM images
Vacancy engineering of 2H-transition metal dichalcogenides (2H-TMDs) has recently attracted great attention due to its potential to fine-tune the phonon and opto-electric properties of these materials. From a mechanical perspective, this symmetry-breaking process typically reduces the overall crack resistance of the material and adversely affects its reliability. However, vacancies can trigger the formation of heterogeneous phases that synergistically improve fracture properties. In this study, using MoSe2 as an example, we characterize the types and density of vacancies that can emerge under electron irradiation and quantify their effect on fracture. Molecular dynamic (MD) simulations, employing a re-parameterized Tersoff potential capable of accurately capturing bond dissociation and structural phase changes, reveal that isolated transition metal monovacancies or chalcogenide divacancies tend to arrest the crack tip and hence enhance the monolayer toughness. In contrast, isolated chalcogenide monovacancies do not significantly affect toughness. The investigation further reveals that selenium vacancy lines, formed by high electron dose rates, alter the crack propagating direction and lead to multiple crack kinking. Using atomic displacements and virial stresses together with a continuum mapping, displacement, strain, and stress fields are computed to extract mechanistic information, e.g., conditions for crack kinking and size effects in fracture events. The study also reveals the potential of specific defect patterns, “vacancy engineering,” to improve the toughness of 2H-TMDs materials.
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- Award ID(s):
- 1953806
- NSF-PAR ID:
- 10520430
- Publisher / Repository:
- Elsevier
- Date Published:
- Journal Name:
- Materials Today
- Volume:
- 70
- Issue:
- C
- ISSN:
- 1369-7021
- Page Range / eLocation ID:
- 17 to 32
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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