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Title: Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor
Abstract This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor (η) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage (BV) of 640 V, and a record high normalizedBVby the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higherη(>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.  more » « less
Award ID(s):
2338604
PAR ID:
10522784
Author(s) / Creator(s):
; ; ; ;
Publisher / Repository:
DOI PREFIX: 10.35848
Date Published:
Journal Name:
Applied Physics Express
Volume:
17
Issue:
7
ISSN:
1882-0778
Format(s):
Medium: X Size: Article No. 074001
Size(s):
Article No. 074001
Sponsoring Org:
National Science Foundation
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