Si is an n-type dopant in Ga2O3 that can be introduced intentionally or unintentionally. The results of Secondary Ion Mass Spectrometry, Hall effect, and infrared absorption experiments show that the hydrogen plasma exposure of Si-doped Ga2O3 leads to the formation of complexes containing Si and H and the passivation of n-type conductivity. The Si-H (D) complex gives rise to an O-H (D) vibrational line at 3477.6 (2577.8) cm-1 and is shown to contain a single H (or D) atom. The direction of the transition moment of this defect has been investigated to provide structure-sensitive information. Theory suggests possible structures for an OH-Si complex that are consistent with its observed vibrational properties.
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Conjugation in polysiloxane copolymers via unexpected Si-O-Si dπ-pπ overlap, a second mechanism?
- Award ID(s):
- 2103628
- PAR ID:
- 10523864
- Publisher / Repository:
- Springer Nature
- Date Published:
- Journal Name:
- Polymer Journal
- Volume:
- 56
- Issue:
- 6
- ISSN:
- 0032-3896
- Page Range / eLocation ID:
- 577 to 588
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
