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We present a study of a graphene-based Josephson junction with dedicated side gates carved from the same sheet of graphene as the junction itself. These side gates are highly efficient and allow us to modulate carrier density along either edge of the junction in a wide range. In particular, in magnetic fields in the 1- to 2-T range, we are able to populate the next Landau level, resulting in Hall plateaus with conductance that differs from the bulk filling factor. When counter-propagating quantum Hall edge states are introduced along either edge, we observe a supercurrent localized along that edge of the junction. Here, we study these supercurrents as a function of magnetic field and carrier density.
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Study of graphene p-n junctions formed by the electrostatic modification of the SiO2 substrate
Abstract We study the transport properties of mm-scale CVD graphene p-n junctions, which are formed in a single gated graphene field effect transistor configuration. Here, an electrical-stressing-voltage technique served to modify the electrostatic potential in the SiO2/Si substrate and create the p-n junction. We examine the transport characteristics about the Dirac points that are localized in the perturbed and unperturbed regions in the graphene channel and note the quantitative differences in the Hall effect between the perturbed and unperturbed regions. The results also show that the longitudinal resistance is highly sensitive to the external magnetic field when the Hall bar device operates as a p-n junction.
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- Award ID(s):
- 2210180
- PAR ID:
- 10524769
- Publisher / Repository:
- Nature Journals
- Date Published:
- Journal Name:
- Scientific Reports
- Volume:
- 14
- Issue:
- 1
- ISSN:
- 2045-2322
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript
- Journal Article:
- https://doi.org/10.1038/s41598-024-61683-2
