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Near 100% external quantum efficiency 1550-nm broad spectrum photodetector
We report InGaAs/InP based p-i-n photodiodes with an external quantum efficiency (EQE) above 98% from 1510 nm to 1575 nm. For surface normal photodiodes with a diameter of 80 µm, the measured 3-dB bandwidth is 3 GHz. The saturation current is 30.5 mA, with an RF output power of 9.3 dBm at a bias of −17 V at 3 GHz.
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- Award ID(s):
- 1842641
- PAR ID:
- 10531099
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Optics Express
- Volume:
- 30
- Issue:
- 2
- ISSN:
- 1094-4087; OPEXFF
- Format(s):
- Medium: X Size: Article No. 3047
- Size(s):
- Article No. 3047
- Sponsoring Org:
- National Science Foundation
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