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GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications
- Award ID(s):
- 2302696
- NSF-PAR ID:
- 10531395
- Publisher / Repository:
- IEEE
- Date Published:
- Journal Name:
- IEEE Transactions on Electron Devices
- Volume:
- 71
- Issue:
- 3
- ISSN:
- 0018-9383
- Page Range / eLocation ID:
- 1641 to 1645
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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