This content will become publicly available on May 16, 2025
- Award ID(s):
- 2203633
- PAR ID:
- 10537506
- Publisher / Repository:
- ACS
- Date Published:
- Journal Name:
- The Journal of Physical Chemistry Letters
- Volume:
- 15
- Issue:
- 19
- ISSN:
- 1948-7185
- Page Range / eLocation ID:
- 5177 to 5182
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
The excited state dynamics of ligand-passivated PbBr2 molecular clusters (MCs) in solution have been investigated for the first time using femtosecond transient absorption spectroscopy. The results uncover a transient bleach (TB) feature peaked around 404 nm, matching the ground state electronic absorption band peaked at 404 nm. The TB recovery signal can be fitted with a triple exponential with fast (10 ps), medium (350 ps), and long (1.8 ns) time constants. The medium and long time constants are very similar to those observed in the timeresolved photoluminescence (TRPL) decay monitored at 412 nm. The TB fast component is attributed to vibrational relaxation in the excited electronic state while the medium component with dominant amplitude is attributed to recombination between the relaxed electron and hole. The small amplitude slow component is assigned to electrons in a relatively long-lived excited electronic state, e.g., triplet state, or shallow trap state due to defects. This study provides new insights into the excited state dynamics of metal halide MCs.more » « less
-
Abstract The spatial heterogeneity of carrier dynamics in polycrystalline metal halide perovskite (MHP) thin films has a strong influence on photovoltaic device performance; however, the underlying cause is not yet clearly understood. Here, the sub‐micrometer scale mapping of charge carrier dynamics in CH3NH3PbI3thin films using time‐resolved nonlinear optical microscopy, specifically transient absorption microscopy (TAM) with sub‐picosecond (ps) and time‐resolved photoluminescence (PL) microscopy with nanosecond temporal resolution is reported. To study the influence of physical morphology on charge carrier dynamics, MHP thin films having granular‐ and fibrous structures are investigated. On both types of films, spatial regions with short‐lived transient gain signals (fast nonradiative relaxation within ≈1 ps) typically show slower charge recombination via radiative relaxation, which is attributed to the presence of additional energy states near the band edge. In addition, fibrous films show longer PL lifetimes. Interestingly, the functional contrast shown in TAM images exhibits fundamental differences from the structural contrast shown in scanning electron microscopy images, implying that the variation of trap density in the bulk contributes to the observed spatial heterogeneity in carrier dynamics.
-
Grain boundaries (GBs) in perovskite solar cells and optoelectronic devices are widely regarded as detrimental defects that accelerate charge and energy losses through nonradiative carrier trapping and recombination, but the mechanism is still under debate owing to the diversity of GB configurations and behaviors. We combine ab initio electronic structure and machine learning force field to investigate evolution of the geometric and electronic structure of a CsPbBr 3 GB on a nanosecond timescale, which is comparable with the carrier recombination time. We demonstrate that the GB slides spontaneously within a few picoseconds increasing the band gap. Subsequent structural oscillations dynamically produce midgap trap states through Pb–Pb interactions across the GB. After several hundred picoseconds, structural distortions start to occur, increasing the occurrence of deep midgap states. We identify a distinct correlation of the average Pb–Pb distance and fluctuations in the ion coordination numbers with the appearance of the midgap states. Suppressing GB distortions through annealing and breaking up Pb–Pb dimers by passivation can efficiently alleviate the detrimental effects of GBs in perovskites. The study provides new insights into passivation of the detrimental GB defects, and demonstrates that structural and charge carrier dynamics in perovskites are intimately coupled.more » « less
-
Abstract A comprehensive experimental study on optical properties and photocarrier dynamics in Bi2O2Se monolayers and nanoplates is presented. Large and uniform Bi2O2Se nanoplates with various thicknesses down to the monolayer limit are fabricated. In nanoplates, a direct optical transition near 720 nm is identified by optical transmission, photoluminescence, and transient absorption spectroscopic measurements and is attributed to the transition between the valence and conduction bands in the Γ valley. Time‐resolved differential reflection measurements reveal ultrafast carrier thermalization and energy relaxation processes and a photocarrier recombination lifetime of about 200 ps in nanoplates. Furthermore, by spatially resolving the differential reflection signal, a photocarrier diffusion coefficient of about 4.8 cm2s−1is obtained, corresponding to a mobility of about 180 cm2V−1s−1. A similar direct transition is also observed in monolayer Bi2O2Se, suggesting that the states in the Γ valley do not change significantly with the thickness. The temporal dynamics of the excitons in the monolayer is quite different from the nanoplates, with a strong saturation effect and fast exciton–exciton annihilation at high densities. Spatially and temporally resolved measurements yield an exciton diffusion coefficient of about 20 cm2s−1.
-
Indium phosphide quantum dots (InP QDs) are nontoxic nanomaterials with potential applications in photocatalytic and optoelectronic fields. Post-synthetic treatments of InP QDs are known to be essential for improving their photoluminescence quantum efficiencies (PLQEs) and device performances, but the mechanisms remain poorly understood. Herein, by applying ultrafast transient absorption and photoluminescence spectroscopies, we systematically investigate the dynamics of photogenerated carriers in InP QDs and how they are affected by two common passivation methods: HF treatment and the growth of a heterostructure shell (ZnS in this study). The HF treatment is found to improve the PLQE up to 16–20% by removing an intrinsic fast hole trapping channel ( τ h,non = 3.4 ± 1 ns) in the untreated InP QDs while having little effect on the band-edge electron decay dynamics ( τ e = 26–32 ns). The growth of the ZnS shell, on the other hand, is shown to improve the PLQE up to 35–40% by passivating both electron and hole traps in InP QDs, resulting in both a long-lived band-edge electron ( τ e > 120 ns) and slower hole trapping lifetime ( τ h,non > 45 ns). Furthermore, both the untreated and the HF-treated InP QDs have short biexciton lifetimes ( τ xx ∼ 1.2 ± 0.2 ps). The growth of an ultra-thin ZnS shell (∼0.2 nm), on the other hand, can significantly extend the biexciton lifetime of InP QDs to 20 ± 2 ps, making it a passivation scheme that can improve both the single and multiple exciton lifetimes. Based on these results, we discuss the possible trap-assisted Auger processes in InP QDs, highlighting the particular importance of trap passivation for reducing the Auger recombination loss in InP QDs.more » « less