Wang, Hui, Lai, Pengyu, Islam, Md Zahidul, Hasan, Abu_Shahir_Md Khalid, Di_Mauro, Anthony, Anika, Nur-E-Afra, Russell, Robert, Feng, Zhuowen, Chen, Kevin, Faruque, Asif, White, Thomas, Chen, Zhong, and Mantooth, H Alan. A review of silicon carbide CMOS technology for harsh environments. Retrieved from https://par.nsf.gov/biblio/10538606. Materials Science in Semiconductor Processing 178.C Web. doi:10.1016/j.mssp.2024.108422.

Wang, Hui, Lai, Pengyu, Islam, Md Zahidul, Hasan, Abu_Shahir_Md Khalid, Di_Mauro, Anthony, Anika, Nur-E-Afra, Russell, Robert, Feng, Zhuowen, Chen, Kevin, Faruque, Asif, White, Thomas, Chen, Zhong, & Mantooth, H Alan. A review of silicon carbide CMOS technology for harsh environments. Materials Science in Semiconductor Processing, 178 (C). Retrieved from https://par.nsf.gov/biblio/10538606. https://doi.org/10.1016/j.mssp.2024.108422

Wang, Hui, Lai, Pengyu, Islam, Md Zahidul, Hasan, Abu_Shahir_Md Khalid, Di_Mauro, Anthony, Anika, Nur-E-Afra, Russell, Robert, Feng, Zhuowen, Chen, Kevin, Faruque, Asif, White, Thomas, Chen, Zhong, and Mantooth, H Alan. "A review of silicon carbide CMOS technology for harsh environments". Materials Science in Semiconductor Processing 178 (C). Country unknown/Code not available: ELSEVIER. https://doi.org/10.1016/j.mssp.2024.108422. https://par.nsf.gov/biblio/10538606.

@article{osti_10538606,
place = {Country unknown/Code not available}, title = {A review of silicon carbide CMOS technology for harsh environments}, url = {https://par.nsf.gov/biblio/10538606}, DOI = {10.1016/j.mssp.2024.108422}, abstractNote = {}, journal = {Materials Science in Semiconductor Processing}, volume = {178}, number = {C}, publisher = {ELSEVIER}, author = {Wang, Hui and Lai, Pengyu and Islam, Md Zahidul and Hasan, Abu_Shahir_Md Khalid and Di_Mauro, Anthony and Anika, Nur-E-Afra and Russell, Robert and Feng, Zhuowen and Chen, Kevin and Faruque, Asif and White, Thomas and Chen, Zhong and Mantooth, H Alan}, }