Topological materials are derived from the interplay between symmetry and topology. Advances in topological band theories have led to the prediction that the antiperovskite oxide Sr3SnO is a topological crystalline insulator, a new electronic phase of matter where the conductivity in its (001) crystallographic planes is protected by crystallographic point group symmetries. Realization of this material, however, is challenging. Guided by thermodynamic calculations, a deposition approach is designed and implemented to achieve the adsorption‐controlled growth of epitaxial Sr3SnO single‐crystal films by molecular‐beam epitaxy (MBE). In situ transport and angle‐resolved photoemission spectroscopy measurements reveal the metallic and electronic structure of the as‐grown samples. Compared with conventional MBE, the used synthesis route results in superior sample quality and is readily adapted to other topological systems with antiperovskite structures. The successful realization of thin films of Sr3SnO opens opportunities to manipulate topological states by tuning symmetries via strain engineering and heterostructuring.
This content will become publicly available on June 8, 2025
The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (
- Award ID(s):
- 2213891
- PAR ID:
- 10539045
- Author(s) / Creator(s):
- ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; more »
- Publisher / Repository:
- Wiley-VCH GmbH
- Date Published:
- Journal Name:
- Advanced Functional Materials
- ISSN:
- 1616-301X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
Abstract -
Utilizing the powerful combination of molecular-beam epitaxy (MBE) and angle-resolved photoemission spectroscopy (ARPES), we produce and study the effect of different terminating layers on the electronic structure of the metallic delafossite PdCoO 2 . Attempts to introduce unpaired electrons and synthesize new antiferromagnetic metals akin to the isostructural compound PdCrO 2 have been made by replacing cobalt with iron in PdCoO 2 films grown by MBE. Using ARPES, we observe similar bulk bands in these PdCoO 2 films with Pd-, CoO 2 -, and FeO 2 -termination. Nevertheless, Pd- and CoO 2 -terminated films show a reduced intensity of surface states. Additionally, we are able to epitaxially stabilize PdFe x Co 1− x O 2 films that show an anomaly in the derivative of the electrical resistance with respect to temperature at 20 K, but do not display pronounced magnetic order.more » « less
-
Abstract Driven by an ever‐expanding interest in new material systems with new functionality, the growth of atomic‐scale electronic materials by molecular beam epitaxy (MBE) has evolved continuously since the 1950s. Here, a new MBE technique called
hybrid ‐MBE (h MBE) is reviewed that has been proven a powerful approach for tackling the challenge of growing high‐quality, multicomponent complex oxides, specifically theAB O3perovskites. The goal of this work is to (1) discuss the development ofh MBE in a historical context, (2) review the advantageous surface kinetics and chemistry that enable the self‐regulated growth ofAB O3perovskites, (3) layout the key components and technical challenges associated withh MBE, (4) review the status of the field and the materials that have been successfully grown byh MBE which demonstrate its general applicability, and (5) discuss the future ofh MBE in regards to technical innovations and expansion into new material classes, which are aimed at expanding into industrial realm and at tackling new scientific endeavors. -
Epitaxial cobaltites have emerged as exemplary materials for electrochemical gating, in large part due to their topotactic perovskite (P) ↔ brownmillerite (BM) transformations. SrCoO3−δ, for example, can be cycled between metallic ferromagnetic P SrCoO3 and insulating BM SrCoO2.5, realizing exceptional modulation of electronic, thermal, and optical properties. It is often presumed that such cycling also generates ferromagnetic–antiferromagnetic (F-AF) modulation due to the G-type AF order in bulk SrCoO2.5. Little is understood about magnetism in thin-film BM SrCoO2.5, however, meaning that the true magnetic property modulation is unclear. We address this here through a neutron diffraction study of BM La1−xSrxCoO2.5 films at x = 0.5 and 1.0. Lightly compressively strained SrCoO2.5 films are shown to retain G-type AF order, albeit with suppressed Néel temperature (∼340 K). Of high interest for AF spintronics, room-temperature F–AF cycling is thus possible across the SrCoO3-δ P ↔ BM transformation. At x = 0.5, however, BM La0.5Sr0.5CoO2.5 films are found to exhibit no detectable G-type AF order but instead weak F order (Curie temperature ∼115 K), unveiling a La0.5Sr0.5CoO3−δ phase diagram with two distinct F phases. These results thus uncover new, unanticipated magnetic phase behavior in these materials, in addition to being directly relevant to cobaltite-based magnetoionics.
-
Epitaxial growth and magnetic properties of kagome metal FeSn/elemental ferromagnet heterostructures
Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flatbands arising from the geometry of the metal-site kagome lattice. To exploit these electronic features for potential applications in spintronics, the growth of high-quality heterostructures is required. Here, we report the synthesis of Fe/FeSn and Co/FeSn bilayers on Al2O3 substrates using molecular beam epitaxy to realize heterointerfaces between elemental ferromagnetic metals and antiferromagnetic kagome metals. Structural characterization using high-resolution x-ray diffraction, reflection high-energy electron diffraction, and electron microscopy reveals that the FeSn films are flat and epitaxial. Rutherford backscattering spectroscopy was used to confirm the stoichiometric window where the FeSn phase is stabilized, while transport and magnetometry measurements were conducted to verify metallicity and magnetic ordering in the films. Exchange bias was observed, confirming the presence of antiferromagnetic order in the FeSn layers, paving the way for future studies of magnetism in kagome heterostructures and potential integration of these materials into devices.