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Title: Thermal optimization of two-terminal SOT-MRAM
While magnetoresistive random-access memory (MRAM) stands out as a leading candidate for embedded nonvolatile memory and last-level cache applications, its endurance is compromised by substantial self-heating due to the high programming current density. The effect of self-heating on the endurance of the magnetic tunnel junction (MTJ) has primarily been studied in spin-transfer torque (STT)-MRAM. Here, we analyze the transient temperature response of two-terminal spin–orbit torque (SOT)-MRAM with a 1 ns switching current pulse using electro-thermal simulations. We estimate a peak temperature range of 350–450 °C in 40 nm diameter MTJs, underscoring the critical need for thermal management to improve endurance. We suggest several thermal engineering strategies to reduce the peak temperature by up to 120 °C in such devices, which could improve their endurance by at least a factor of 1000× at 0.75 V operating voltage. These results suggest that two-terminal SOT-MRAM could significantly outperform conventional STT-MRAM in terms of endurance, substantially benefiting from thermal engineering. These insights are pivotal for thermal optimization strategies in the development of MRAM technologies.  more » « less
Award ID(s):
2328804 2345655
PAR ID:
10539450
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ;
Publisher / Repository:
AIP Publishing
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
136
Issue:
1
ISSN:
0021-8979
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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