Yu, Mingyu, Iddawela, Sahani Amaya, Wang, Jiayang, Hilse, Maria, Thompson, Jessica L, Reifsnyder_Hickey, Danielle, Sinnott, Susan B, and Law, Stephanie. Quasi-Van der Waals Epitaxial Growth of γ′-GaSe Nanometer-Thick Films on GaAs(111)B Substrates. Retrieved from https://par.nsf.gov/biblio/10541032. ACS Nano 18.26 Web. doi:10.1021/acsnano.4c04194.

Yu, Mingyu, Iddawela, Sahani Amaya, Wang, Jiayang, Hilse, Maria, Thompson, Jessica L, Reifsnyder_Hickey, Danielle, Sinnott, Susan B, & Law, Stephanie. Quasi-Van der Waals Epitaxial Growth of γ′-GaSe Nanometer-Thick Films on GaAs(111)B Substrates. ACS Nano, 18 (26). Retrieved from https://par.nsf.gov/biblio/10541032. https://doi.org/10.1021/acsnano.4c04194

Yu, Mingyu, Iddawela, Sahani Amaya, Wang, Jiayang, Hilse, Maria, Thompson, Jessica L, Reifsnyder_Hickey, Danielle, Sinnott, Susan B, and Law, Stephanie. "Quasi-Van der Waals Epitaxial Growth of γ′-GaSe Nanometer-Thick Films on GaAs(111)B Substrates". ACS Nano 18 (26). Country unknown/Code not available: ACS Nano. https://doi.org/10.1021/acsnano.4c04194. https://par.nsf.gov/biblio/10541032.

@article{osti_10541032,
place = {Country unknown/Code not available}, title = {Quasi-Van der Waals Epitaxial Growth of γ′-GaSe Nanometer-Thick Films on GaAs(111)B Substrates}, url = {https://par.nsf.gov/biblio/10541032}, DOI = {10.1021/acsnano.4c04194}, abstractNote = {}, journal = {ACS Nano}, volume = {18}, number = {26}, publisher = {ACS Nano}, author = {Yu, Mingyu and Iddawela, Sahani Amaya and Wang, Jiayang and Hilse, Maria and Thompson, Jessica L and Reifsnyder_Hickey, Danielle and Sinnott, Susan B and Law, Stephanie}, }