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  • Correction to “Layered Semiconductor Cr 0.32 Ga 0.68 Te 2.33 with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate”
Title: Correction to “Layered Semiconductor Cr 0.32 Ga 0.68 Te 2.33 with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate”
Award ID(s):
2011839
PAR ID:
10542203
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ;
Publisher / Repository:
American Chemical Society Publications
Date Published:
Journal Name:
Journal of the American Chemical Society
Volume:
145
Issue:
39
ISSN:
0002-7863
Page Range / eLocation ID:
21696 to 21696
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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