P-Type Doping Control of Magnetron Sputtered NiO for High Voltage UWBG Device Structures | NSF Public Access Repository

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Citation Details

P-Type Doping Control of Magnetron Sputtered NiO for High Voltage UWBG Device Structures

Award ID(s):: 2230412

PAR ID:: 10545907

Author(s) / Creator(s):: Porter, Matthew A; Ma, Yunwei; Qin, Yuan; Zhang, Yuhao

Publisher / Repository:: IEEE

Date Published:: 2023-12-04

ISBN:: 979-8-3503-3713-6

Page Range / eLocation ID:: 1 to 7

Format(s):: Medium: X

Location:: Charlotte, NC, USA

Sponsoring Org:: National Science Foundation

Free Publicly Accessible Full Text
Accepted Manuscript
Conference Paper:
https://doi.org/10.1109/WiPDA58524.2023.10382226