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1. Colossal magnetoresistance in the multiple wave vector charge density wave regime of an antiferromagnetic Dirac semimetal

   https://doi.org/10.1126/sciadv.adh0145  

   Singha, Ratnadwip; Dalgaard, Kirstine J.; Marchenko, Dmitry; Krivenkov, Maxim; Rienks, Emile D.; Jovanovic, Milena; Teicher, Samuel M.; Hu, Jiayi; Salters, Tyger H.; Lin, Jingjing; et al (October 2023, Science Advances)

   Colossal negative magnetoresistance is a well-known phenomenon, notably observed in hole-doped ferromagnetic manganites. It remains a major research topic due to its potential in technological applications. In contrast, topological semimetals show large but positive magnetoresistance, originated from the high-mobility charge carriers. Here, we show that in the highly electron-doped region, the Dirac semimetal CeSbTe demonstrates similar properties as the manganites. CeSb_0.11Te_1.90hosts multiple charge density wave modulation vectors and has a complex magnetic phase diagram. We confirm that this compound is an antiferromagnetic Dirac semimetal. Despite having a metallic Fermi surface, the electronic transport properties are semiconductor-like and deviate from known theoretical models. An external magnetic field induces a semiconductor metal–like transition, which results in a colossal negative magnetoresistance. Moreover, signatures of the coupling between the charge density wave and a spin modulation are observed in resistivity. This spin modulation also produces a giant anomalous Hall response. 

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2. Current-sensitive Hall effect in a chiral-orbital-current state

   https://doi.org/10.1038/s41467-024-47823-2  

   Zhang, Yu; Ni, Yifei; Schlottmann, Pedro; Nandkishore, Rahul; DeLong, Lance E.; Cao, Gang (April 2024, Nature Communications)

   Abstract Chiral orbital currents (COC) underpin a novel colossal magnetoresistance in ferrimagnetic Mn₃Si₂Te₆. Here we report the Hall effect in the COC state which exhibits the following unprecedented features: (1) A sharp, current-sensitive peak in the magnetic field dependence of the Hall resistivity, and (2) A current-sensitive scaling relation between the Hall conductivityσ_xyand the longitudinal conductivityσ_xx, namely,σ_xy∝σ_xx^αwith α reaching up to 5, which is exceptionally large compared toα ≤ 2 typical of all solids. The novel Hall responses along with a current-sensitive carrier density and a large Hall angle of 15% point to a giant, current-sensitive Hall effect that is unique to the COC state. Here, we show that a magnetic field induced by the fully developed COC combines with the applied magnetic field to exert the greatly enhanced transverse force on charge carriers, which dictates the COC Hall responses. 

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3. Large anomalous Hall effect and negative magnetoresistance in half-topological semimetals

   https://doi.org/10.1038/s42005-023-01469-6  

   Zhu, Yanglin; Huang, Cheng-Yi; Wang, Yu; Graf, David; Lin, Hsin; Lee, Seng Huat; Singleton, John; Min, Lujin; Palmstrom, Johanna C.; Bansil, Arun; et al (November 2023, Communications Physics)

   Abstract Proposed mechanisms for large intrinsic anomalous Hall effect (AHE) in magnetic topological semimetals include diverging Berry curvatures of Weyl nodes, anticrossing nodal rings or points of non-trivial bands. Here we demonstrate that a half-topological semimetal (HTS) state near a topological critical point can provide an alternative mechanism for a large AHE via systematic studies on an antiferromagnetic (AFM) half-Heusler compound TbPdBi. We not only observe a large AHE with tanΘ^H≈ 2 in its field-driven ferromagnetic (FM) phase, but also find a distinct Hall resistivity peak in its canted AFM phase. Moreover, we observe a large negative magnetoresistance with a value of ~98%. Our in-depth theoretical modelling indicates that these exotic transport properties originate from the HTS state which exhibits Berry curvature cancellation between the trivial spin-up and nontrivial spin-down bands. Our study offers alternative strategies for improved materials design for spintronics and other applications. 

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4. Spin fluctuation driven magnetoresistance, domain Re-distribution and anomalous Hall effect in helical antiferromagnetic Eu metal thin films

   https://doi.org/10.1063/9.0000861  

   Shrestha, Narendra; Tang, Jinke (March 2025, AIP Advances)

   Europium (Eu) metal has a body centered cubic crystal structure which, upon a paramagnetic-to-helical magnetic phase transition, undergoes a body centered tetragonal distortion. The magnetic helix appears below a Néel temperature (TN) of ∼90 K, and an applied magnetic field gives rise to conical magnet structure. We have prepared Eu metal thin films on Si (001) substrates using Eu metal as a target by pulsed laser deposition and studied the transport properties by a four-probe method. The resistance shows a sudden slope change at TN of 88 K. The magnetoresistance (MR) is positive at temperatures below 30 K and exhibits negative values above that. Our analyses show that the positive MR at low temperatures originates from magnetic field induced spin fluctuation, and the negative MR at higher temperature is a result of suppression of critical spin fluctuation of the Eu spins by the magnetic field. The Eu film also shows hysteretic MR behaviors in mid field range, which is a result of re-distribution of the helical antiferromagnetic domains by the magnetic fields. We have also studied the transverse magnetotransport in the Eu thin films. The observed anomalous Hall effect is believed to be associated with the magnetic moment induced by the field or due to the helical spin structure of Eu itself. 

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5. Anisotropic and High‐Mobility Electronic Transport in a Quasi 2D Antiferromagnet NdSb ₂

   https://doi.org/10.1002/adfm.202308733  

   Singha, Ratnadwip; Yuan, Fang; Lee, Scott_B; Villalpando, Graciela_V; Cheng, Guangming; Singh, Birender; Sarker, Suchismita; Yao, Nan; Burch, Kenneth_S; Schoop, Leslie_M (November 2023, Advanced Functional Materials)

   Abstract Advancements in low‐dimensional functional device technology heavily rely on the discovery of suitable materials which have interesting physical properties as well as can be exfoliated down to the 2D limit. Exfoliable high‐mobility magnets are one such class of materials that, not due to lack of effort, has been limited to only a handful of options. So far, most of the attention has been focused on the van der Waals (vdW) systems. However, even within the non‐vdW, layered materials, it is possible to find all these desirable features. Using chemical reasoning, it is found that NdSb₂is an ideal example. Even with a relatively small interlayer distance, this material can be exfoliated down to few layers. NdSb₂has an antiferromagnetic ground state with a quasi 2D spin arrangement. The bulk crystals show a very large, non‐saturating magnetoresistance along with highly anisotropic electronic transport properties. It is confirmed that this anisotropy originates from the 2D Fermi pockets which also imply a rather quasi 2D confinement of the charge carrier density. Both electron and hole‐type carriers show very high mobilities. The possible non‐collinear spin arrangement also results in an anomalous Hall effect. 

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