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1. Magnetic properties and spin reorientation of hexagonal HoFeO3 thin films

   https://doi.org/https://doi.org/10.1016/j.tsf.2021.138596  

   R.C. Rai, C. Horvatits (April 2021, Thin solid films)

   null (Ed.)

   We present structural, magnetic, and optical properties of hexagonal HoFeO3/Al2O3 thin films deposited by Magnetron Sputtering. The x-ray diffraction patterns of HoFeO3 thin films show the c-planes of a hexagonal structure. The magnetization data display an antiferromagnetic transition temperature, TN∼120 ± 5 K and the magnetization-field hysteresis loops were measured below 100 K, confirming a weak ferromagnetism arising from a spin canting of the Fe3+ moments. The magnetization data also show an anomaly around ∼40 K due to a spin-reorientation transition caused by the Ho3+- Fe3+ interactions. We observed comparable magnetization along the ab plane and c axis although the spin canting of Fe3+ sites has a preferential component along the c axis, suggesting that the Ho3+- Fe3+ interactions dominate in the low temperature magnetic structures of hexagonal-HoFeO3. The observed electronic excitations at ∼2.29, 2.87, 3.82, 4.79, and 6.53 eV have been assigned to the Fe3+ d to d on-site as well as O 2p to Fe 3d, Ho 6s, and 5d charge-transfer excitations, respectively. The room temperature energy band gap of the hexagonal-HoFeO3 thin film was measured to be ∼1.99 ± 0.04 eV. 

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2. Magnetic x-ray spectroscopy of Gd-doped EuO thin films

   https://doi.org/10.1103/PhysRevMaterials.9.024410  

   Arnold, E L; Riley, J M; Duffy, L B; Figueroa, A I; Held, R; Shen, K M; Schlom, D G; King, P_D C; Hoesch, M; van_der_Laan, G; et al (February 2025, Physical Review Materials)

   We present a detailed x-ray magnetic circular dichroism (XMCD) study of the magnetic properties of Gd-doped EuO thin films, synthesized via molecular-beam epitaxy with Gd doping levels up to over 12%. The impact of Gd doping on the electronic and magnetic behavior of EuO is studied using XMCD and magnetometry. Gd doping significantly enhances the Curie temperature ( $T_{\mathrm{C}}$) from 69 K in undoped EuO to over 120 K, driven by increased carrier density, while preserving the high quality of the single-crystalline films. At higher doping levels, a plateau in $T_{\mathrm{C}}$is observed, which is attributed to the formation of Eu-Gd nearest-neighbor pairs that limit dopant activation. We also observe a distinctive “double-dome” structure in the temperature-dependent magnetization, which we attribute to both the ferromagnetic ordering of Eu $4f$moments at lower temperatures and the influence of conduction electrons via $4f\text{−}5d$exchange interactions at higher temperatures. These findings provide key insights into the mechanisms of carrier-induced magnetic transitions. Published by the American Physical Society2025 

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3. Switching of Magnetic Order via Non‐Magnetic Al Addition in FeCoNiMnAl _x Films

   https://doi.org/10.1002/adfm.202424741  

   Beeson, Willie B; Bista, Dinesh; Naushin, Nushrat; N'Diaye, Alpha T; Kukreja, Roopali; Yin, Gen; Liu, Kai (April 2025, Advanced Functional Materials)

   Abstract Magnetic high entropy alloys (HEAs) consisting of 3dtransition metals offer an exciting platform to explore novel magnetic phases as they often house competing exchange interactions in combination with random site disorders. In this work, a sensitive and tunable magnetic order is demonstrated in sputtered single‐layer FeCoNiMnAl_xfilms, as a function of non‐magnetic Al addition, along with an unexpected exchange bias effect. Thin films of 50 nm FeCoNiMn exhibit a face‐centered‐cubic (fcc) phase, reentrant spin glass (SG) transition near 100 K, and a large exchange bias of over 500 Oe after field‐cooling to 5 K. The exchange bias is increased to 930 Oe through a small addition of 5 at.% Al. Further Al addition to 12 at.% results in a body‐centered‐cubic (bcc) phase, coinciding with a large increase in the saturation magnetization, decrease of exchange bias to 50 Oe, and suppression of SG behavior. The change in magnetic order across the Al‐induced structural transformation is mediated by the switching of Mn ground state from AF to FM, which is supported by first‐principles calculations and experimentally confirmed via X‐ray magnetic circular dichroism. These results open up new HEA strategies for explorations of novel magnetic phases. 

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4. Magnetic and electron transport properties of Co2Si nanomagnets

   https://doi.org/10.1103/PhysRevMaterials.5.024402  

   Balasubramanian, Balamurugan; George, Tom A; Manchanda, Priyanka; Pahari, Rabindra; Ullah, Ahsan; Skomski, Ralph; Sellmyer, David J (February 2021, Physical review materials)

   Magnetotransport and ferromagnetism in thin films of Co2Si nanoclusters are investigated experimentally and theoretically. The nanoclusters are fabricated by an inert-gas condensation-type cluster-deposition method and have an average size of 11.3 nm. Unlike the bulk Co2Si that exhibits a very weak net magnetic moment only below 10 K, the nanoclusters exhibit room-temperature ferromagnetism with a substantial saturation magnetization. Key features of the system are its closeness to the Stoner transition, magnetic moments induced by spin polarization starting from surface atoms, and nonuniaxial anisotropy associated with the orthorhombic crystal structure of Co2Si. A method is introduced to determine the effective anisotropy using the experimental magnetization data of this complex system and its relationship with the two lowest-order nonuniaxial anisotropy constants. On decreasing temperature from 300 K, the nanoclusters show electron-transport properties unusual for a ferromagnetic metal, including an increase of Hall resistivity and a nonmonotonic change of negative magnetoresistance with a peak at around 100 K. The underlying physics is explained on the basis of the large polarization of surface spins and variation in the degree of their misalignments due to temperature-dependent effective anisotropy. 

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5. Antiferromagnetic semiconductor Eu ₃ Sn ₂ P ₄ with Sn–Sn dimer and crown-wrapped Eu

   https://doi.org/10.1039/C9TC03557E  

   Blawat, Joanna; Swatek, Przemyslaw; Gui, Xin; Jin, Rongying; Xie, Weiwei (October 2019, Journal of Materials Chemistry C)

   A novel antiferromagnetic semiconductor, Eu 3 Sn 2 P 4 , has been discovered. Single crystals of Eu 3 Sn 2 P 4 were prepared using the Sn self-flux method. The crystal structure determined by single crystal X-ray diffraction shows that Eu 3 Sn 2 P 4 crystallizes in the orthorhombic structure with the space group Cmca (Pearson Symbol, oP 216). Six Sn–Sn dimers connected by P atoms form a Sn 12 P 24 crown-shaped cluster with a Eu atom located in the center. Magnetization measurements indicate that the system orders antiferromagnetically below a T N ∼14 K at a low field and undergoes a metamagnetic transition at a high field when T < T N . The effective magnetic moment is 7.41(3) μ B per Eu, corresponding to Eu 2+ . The electric resistivity reveals a non-monotonic temperature dependence with non-metallic behavior below ∼60 K, consistent with the band structure calculations. By fitting the data using the thermally activated resistivity formula, we estimate the energy gap to be ∼0.14 eV. Below T N , the resistivity tends to saturate, suggesting the reduction of charge-spin scattering. 

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