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Title: In-plane anisotropic two-dimensional materials for twistronics
Abstract In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this perspective we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T′ and Tdphases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.  more » « less
Award ID(s):
2142310
PAR ID:
10559884
Author(s) / Creator(s):
; ; ; ; ;
Publisher / Repository:
Institute of physics
Date Published:
Journal Name:
Nanotechnology
Volume:
35
Issue:
26
ISSN:
0957-4484
Page Range / eLocation ID:
262501
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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