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Processing-in-memory (PIM) has been proposed as an alternative computing paradigm for training Deep Neural Networks, including Graph Neural Networks (GNNs). Despite these advancements, training GNN workloads on PIM devices necessitates off-chip memory access. This off-chip access is expensive in terms of performance and energy, thereby impacting the overall energy efficiency of the training process on PIM platforms. In this article, we propose a novel hybrid training framework called ERGo that automatically switches from a full-parameter phase to a parameter-efficient phase during the training process with negligible loss in predictive accuracy. The parameter-efficient phase employs low-rank representations of GNN weights, effectively reducing the number of trainable parameters. This helps in reducing the off-chip access during the end-to-end training process on PIM architectures, leading to notable improvements in both performance and energy efficiency. ERGo outperforms the conventional full-parameter GNN training on a PIM-based platform by up to 3.15x in speedup and enhances energy efficiency by 10.5x. Furthermore, ERGo offers additional advantages when utilized on heterogeneous architectures incorporating non-volatile memory (NVM) and static random-access memory (SRAM). Training on the heterogeneous NVM-SRAM architecture typically utilizes NVM for the forward-pass and SRAM for the backward-pass. However, NVM cells suffer from low device endurance and repeated write operations due to weight updates can lead to poor lifetime. ERGo improves the lifetime of NVM devices by freezing the weights and preventing weight updates in the parameter-efficient phase. Experimental results demonstrate that ERGo improves the lifetime of heterogeneous NVM-SRAM architecture by up to 33x in comparison to full-parameter implementation.
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Efficient Memory Integration: MRAM-SRAM Hybrid Accelerator for Sparse On-Device Learning
With the prosperous development of Deep Neural Network (DNNs), numerous Process-In-Memory (PIM) designs have emerged to accelerate DNN models with exceptional throughput and energy-efficiency. PIM accelerators based on Non-Volatile Memory (NVM) or volatile memory offer distinct advantages for computational efficiency and performance. NVM based PIM accelerators, demonstrated success in DNN inference, face limitations in on-device learning due to high write energy, latency, and instability. Conversely, fast volatile memories, like SRAM, offer rapid read/write operations for DNN training, but suffer from significant leakage currents and large memory footprints. In this paper, for the first time, we present a fully-digital sparse processing in hybrid NVM-SRAM design, synergistically combines the strengths of NVM and SRAM, tailored for on-device continual learning. Our designed NVM and SRAM based PIM circuit macros could support both storage and processing of N:M structured sparsity pattern, significantly improving the storage and computing efficiency. Exhaustive experiments demonstrate that our hybrid system effectively reduces area and power consumption while maintaining high accuracy, offering a scalable and versatile solution for on-device continual learning.
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- PAR ID:
- 10563169
- Publisher / Repository:
- ACM
- Date Published:
- Page Range / eLocation ID:
- 1 to 6
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Generative Adversarial Network (GAN) has emerged as one of the most promising semi-supervised learning methods where two neural nets train themselves in a competitive environment. In this paper, as far as we know, we are the first to present a statistically trained Ternarized Generative Adversarial Network (TGAN) with fully ternarized weights (i.e. -1,0,+1) to massively reduce the need for computation and storage resources in the conventional GAN structures. In the proposed TGAN, the computationally expensive convolution operations (i.e. Multiplication and Accumulation) in both generator and discriminator's forward path are converted into hardware-friendly Addition/Subtraction operations. Accordingly, we propose a Processing-in-Memory accelerator for TGAN called (PIM-TGAN) based on Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) computational sub-arrays to efficiently accelerate the training process of GAN within non-volatile memory. In addition, we propose a parallelism technique to further enhance the training efficiency of TGAN. Our device-to-architecture co-simulation results show that, with almost the same inception score to the baseline GAN with floating point number weights on different data-sets, the proposed PIM-TGAN can obtain ~25.6× better energy-efficiency and 22× speedup compared to GPU platform averagely, and, 9.2× better energy-efficiency and 5.4× speedup over the best processing-in-ReRAM accelerators.more » « less
- Free Publicly Accessible Full Text
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Accepted Manuscript
- Conference Paper:
- https://doi.org/10.1145/3649329.3657390
