skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


This content will become publicly available on November 1, 2025

Title: Copper‐Graphene Composite (CGC) Conductors: Synthesis, Microstructure, and Electrical Performance
Abstract Improving the electrical performance of copper, the most widely used electrical conductor in the world is of vital importance to the progress of key technologies, including electric vehicles, portable devices, renewable energy, and power grids. Copper‐graphene composite (CGC) stands out as the most promising candidate for high‐performance electrical conductor applications. This can be attributed to the superior properties of graphene fillers embedded in CGC, including excellent electrical and thermal conductivity, corrosion resistance, and high mechanical strength. This review highlights the recent progress of CGC conductors, including their fabrication processes, electrical performances, mechanisms of copper‐graphene interplay, and potential applications.  more » « less
Award ID(s):
2338609
PAR ID:
10563733
Author(s) / Creator(s):
; ; ;
Publisher / Repository:
Wiley
Date Published:
Journal Name:
Small
Volume:
20
Issue:
47
ISSN:
1613-6810
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract High‐performance electrical conductors at higher temperatures are increasingly needed in aerospace, electric vehicles, and military applications. This study develops an innovative multilayered graphene–metal composite conductor, significantly surpassing the maximum temperature limit of conventional copper (≈90 °C for commercial wires). This approach involves integrating fine copper (Cu) wire with functional shells to exploit the high electrical conductivity and chemical inertness of silver (Ag) and graphene (G), as well as excellent anti‐oxidation of nickel (Ni). Three different composite conductors, namely, NiGCu, NiAgCu, and NiAgGCu, are synthesized, characterized, and compared to quantify their overall performance and investigate the functionality of each shell. This work highlights the importance of the G layer. For example, NiAgGCu has 29.3% lower resistivity than NiAgCu, 34% lower resistivity than NiGCu, and 18.7% higher current density limit than NiAgCu after exposure to 550–850 °C. Both molecular dynamics (MD) and finite elements (FE) simulations are performed to reveal the detailed mechanisms of unprecedented thermal stability. These theoretical studies suggest that the embedded continuous graphene layer, even with its unavoidable defects, is attributed to significant performance enhancements up to 850 °C. The results present possible strategies to address current technical bottlenecks for high‐performance electrical conductors in harsh environments. 
    more » « less
  2. Abstract Vertically oriented graphene (VG) nanosheets exhibit unique structural characteristics, such as large accessible surface area, rich edges, high electrical conductivity, open network channels, and agglomeration resistance, for electrochemical energy‐storage applications (e. g., supercapacitors, lithium‐ion batteries, etc.). In this Review article, we summarize recent progress in the design and engineering of VG‐based electrodes for high‐performance electrochemical energy technologies within the context of energy‐storage mechanisms and charge‐transfer kinetics, and include a perspective to highlight the challenges and promises in the exploitation of vertically oriented two‐dimensional carbon nanostructures for further enhancement of the performance of electrochemical energy‐storage devices. 
    more » « less
  3. The rate at which graphene is used in different fields of science and engineering has only increased over the past decade and shows no indication of saturating. At the same time, the most common source of high-quality graphene is through chemical vapor deposition (CVD) growth on copper foils with subsequent wet transfer steps that bring environmental problems and technical challenges due to the compliance of copper foils. To overcome these issues, thin copper films deposited on silicon wafers have been used, but the high temperatures required for graphene growth can cause dewetting of the copper film and consequent challenges in obtaining uniform growth. In this work, we explore sapphire as a substrate for the direct growth of graphene without any metal catalyst at conventional metal CVD temperatures. First, we found that annealing the substrate prior to growth was a crucial step to improve the quality of graphene that can be grown directly on such substrates. The graphene grown on annealed sapphire was uniformly bilayer and had some of the lowest Raman D/G ratios found in the literature. In addition, dry transfer experiments have been performed that have provided a direct measure of the adhesion energy, strength, and range of interactions at the sapphire/graphene interface. The adhesion energy of graphene to sapphire is lower than that of graphene grown on copper, but the strength of the graphene–sapphire interaction is higher. The quality of the several centimeter scale transfer was evaluated using Raman, SEM, and AFM as well as fracture mechanics concepts. Based on the evaluation of the electrical characteristics of the graphene synthesized in this work, this work has implications for several potential electronic applications. 
    more » « less
  4. Sreenivasan, S.V. (Ed.)
    A roll-to-roll (R2R) technique is especially desirable for transfer of chemical vapor deposition (CVD) graphene towards high-speed, low-cost, renewable, and environmentally friendly manufacturing of graphene-based electronic devices, such as flexible touchscreens, field effect transistors and organic solar cells. A R2R graphene dry transfer system is recently developed. Monolayer graphene is transferred from a copper growth substrate to a polymer backing layer by mechanical peeling. In this work, we present an experimental study to examine the effects of line speed of the mechanical peeling process on the transferred graphene quality. It is shown that the effect of line speed is not monotonic, and an optimal speed exists to yield the highest and most consistent electrical conductivity of transferred graphene among the process conditions studied. This study provides understanding of process parameter effects and demonstrates the potential of the R2R dry transfer process for large-scale CVD graphene toward industrial applications. 
    more » « less
  5. Abstract Monolayer graphene growth on liquid copper (Cu) has attracted attention due to advantages of a flat/smooth catalytic growth surface, high synthesis temperature (>1080 °C) as well as the possibility of forming graphene domains that are mobile on the liquid Cu with potential to minimize grain boundary defects and self-assemble into a continuous monolayer film. However, the quality of monolayer graphene grown on liquid copper and its suitability for size-selective ionic/molecular membrane separations has not been evaluated/studied. Here, we probe the quality of monolayer graphene grown on liquid Cu (via a metallurgical process, HSMG®) using Scanning Electron Microscope (SEM), High-resolution transmission electron microscope (HR-TEM), Raman spectroscopy and report on a facile approach to assess intrinsic sub-nanometer to nanometer-scale defects over centimeter-scale areas. We demonstrate high transfer yields of monolayer graphene (>93% coverage) from the growth substrate to polyimide track etched membrane (PITEM, pore diameter ∼200 nm) supports to form centimeter-scale atomically thin membranes. Next, we use pressure-driven transport of ethanol to probe defects > 60 nm and diffusion-driven transport of analytes (KCl ∼0.66 nm, L-Tryptophan ∼0.7–0.9 nm, Vitamin B12 ∼1–1.5 nm and Lysozyme ∼3.8–4 nm) to probe nanoscale and sub-nanometer scale defects. Diffusive transport confirms the presence of intrinsic sub-nanometer to nanometer scale defects in monolayer graphene grown on liquid Cu are no less than that in high-quality graphene synthesized via chemical vapor deposition (CVD) on solid Cu. Our work not only benchmarks quality of graphene grown on liquid copper for membrane applications but also provides fundamental insights into the origin of intrinsic defects in large-area graphene synthesized via bottom-up processes for membrane applications. 
    more » « less