ABSTRACT CVD graphene growth typically uses commercially available cold-rolled copper foils, which includes a rich topography with scratches, dents, pits, and peaks. The graphene grown on this topography, even after annealing the foil, tends to include and reflect these topographic features. Further, the transfer of such CVD graphene to a flat substrate using a polymer transfer method also introduces wrinkles. Here, we examine an electropolishing technique for reducing native foil defects, characterize the resulting foil surface, grow single-crystal graphene on the polished foil, and examine the quality of the graphene for such defects. 
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                            Direct Metal-Free Growth and Dry Separation of Bilayer Graphene on Sapphire: Implications for Electronic Applications
                        
                    
    
            The rate at which graphene is used in different fields of science and engineering has only increased over the past decade and shows no indication of saturating. At the same time, the most common source of high-quality graphene is through chemical vapor deposition (CVD) growth on copper foils with subsequent wet transfer steps that bring environmental problems and technical challenges due to the compliance of copper foils. To overcome these issues, thin copper films deposited on silicon wafers have been used, but the high temperatures required for graphene growth can cause dewetting of the copper film and consequent challenges in obtaining uniform growth. In this work, we explore sapphire as a substrate for the direct growth of graphene without any metal catalyst at conventional metal CVD temperatures. First, we found that annealing the substrate prior to growth was a crucial step to improve the quality of graphene that can be grown directly on such substrates. The graphene grown on annealed sapphire was uniformly bilayer and had some of the lowest Raman D/G ratios found in the literature. In addition, dry transfer experiments have been performed that have provided a direct measure of the adhesion energy, strength, and range of interactions at the sapphire/graphene interface. The adhesion energy of graphene to sapphire is lower than that of graphene grown on copper, but the strength of the graphene–sapphire interaction is higher. The quality of the several centimeter scale transfer was evaluated using Raman, SEM, and AFM as well as fracture mechanics concepts. Based on the evaluation of the electrical characteristics of the graphene synthesized in this work, this work has implications for several potential electronic applications. 
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                            - Award ID(s):
- 2110526
- PAR ID:
- 10521691
- Publisher / Repository:
- ACS publications
- Date Published:
- Journal Name:
- ACS Applied Nano Materials
- Volume:
- 6
- Issue:
- 20
- ISSN:
- 2574-0970
- Page Range / eLocation ID:
- 19018 to 19028
- Subject(s) / Keyword(s):
- graphene growth dry transfer sapphire adhesion strength adhesion energy
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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