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We report experimental evidence that MoSe2 and WS2 allow the formation of type-I and type-II interfaces, according to the thickness of the former. Heterostructure samples are obtained by stacking a monolayer WS2 flake on top of a MoSe2 flake that contains regions of thickness from one to four layers. Photoluminescence spectroscopy and transient absorption measurements reveal a type-II interface in the regions of monolayer MoSe2 in contact with monolayer WS2. In other regions of the heterostructure formed by multilayer MoSe2 and monolayer WS2, features of type-I interface are observed, including the absence of charge transfer and dominance of intralayer excitons in MoSe2. The coexistence of type-I and type-II interfaces in a single heterostructure offers opportunities to design sophisticated two-dimensional materials with finely controlled photocarrier behaviors.
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Monolayer-like Exciton Recombination Dynamics of Multilayer MoSe 2 Observed by Pump–Probe Microscopy
Transition metal dichalcogenides (TMDCs) have garnered considerable interest over the past decade as a class of semiconducting layered materials. Most studies on the carrier dynamics in these materials have focused on the monolayer due to its direct bandgap, strong photoluminescence, and strongly bound excitons. However, a comparative understanding of the carrier dynamics in multilayer (e.g., >10 layers) flakes is still absent. Recent computational studies have suggested that excitons in bulk TMDCs are confined to individual layers, leading to room-temperature stable exciton populations. Using this new context, we explore the carrier dynamics in MoSe2 flakes that are between ∼16 and ∼125 layers thick. We assign the kinetics to exciton–exciton annihilation (EEA) and Shockley–Read–Hall recombination of free carriers. Interestingly, the average observed EEA rate constant (0.003 cm2/s) is nearly independent of flake thickness and 2 orders of magnitude smaller than that of an unencapsulated monolayer (0.33 cm2/s) but very similar to values observed in encapsulated monolayers. Thus, we posit that strong intralayer interactions minimize the effect of layer thickness on recombination dynamics, causing the multilayer to behave like the monolayer and exhibit an apparent EEA rate intrinsic to MoSe2.
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- PAR ID:
- 10566020
- Publisher / Repository:
- American Chemical Society
- Date Published:
- Journal Name:
- Nano Letters
- Volume:
- 24
- Issue:
- 4
- ISSN:
- 1530-6984
- Page Range / eLocation ID:
- 1431 to 1438
- Subject(s) / Keyword(s):
- pump−probe microscopy MoSe2 transition metal dichalcogenide multilayer recombination excitons
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1021/acs.nanolett.3c04754
