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   https://doi.org/10.1039/D4MA00626G  

   Li, Shuai; Quddus, Ruhul; Das, Sree Sourav; Wang, Haobo; Floro, Jerrold A; Zebarjadi, Mona (October 2024, Materials Advances)

   The first investigation on the properties of intermetallic YbZn₁₁for active cooling: an unconventional thermoelectric application. 

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2. Oxygen Incorporation in the Molecular Beam Epitaxy Growth of Sc _x Ga _1−x N and Sc _x Al _1−x N

   https://doi.org/10.1002/pssb.201900612  

   Casamento, Joseph; Xing, Huili Grace; Jena, Debdeep (January 2020, physica status solidi (b))

   Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer heterostructures: Sc_xGa_1−xN/GaN and Sc_xAl_1−xN/AlN grown by molecular beam epitaxy (MBE). In the Sc_xGa_1−xN/GaN heterostructure grown in metal‐rich conditions on GaN–SiC template substrates with Sc contents up to 28 at%, the oxygen concentration is found to be below 1 × 10¹⁹ cm⁻³, with an increase directly correlated with the scandium content. In the Sc_xAl_1−xN–AlN heterostructure grown in nitrogen‐rich conditions on AlN–Al₂O₃template substrates with Sc contents up to 26 at%, the oxygen concentration is found to be between 10¹⁹and 10²¹ cm⁻³, again directly correlated with the Sc content. The increase in oxygen and carbon takes place during the deposition of scandium‐alloyed layers. 

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3. Transport Properties of GdTe _{1.8– x} As _x ( x = 0, 0.04)

   https://doi.org/10.1002/ejic.202000195  

   Poddig, Hagen; Hobbis, Dean; Alzahrani, Noha; Doert, Thomas; Nolas, George S. (June 2020, European Journal of Inorganic Chemistry)
4. Medium‐Entropy Engineering of Magnetism in Layered Antiferromagnet Cu _x Ni _{2(1‐ x )} Cr _x P ₂ S ₆

   https://doi.org/10.1002/adfm.202418722  

   Upreti, Dinesh; Basnet, Rabindra; Sharma, M_M; Chhetri, Santosh_Karki; Acharya, Gokul; Nabi, Md_Rafique_Un; Sakon, Josh; Benamara, Mourad; Mortazavi, Mansour; Hu, Jin (December 2024, Advanced Functional Materials)

   Abstract Antiferromagnetic van der Waals‐typeM₂P₂X₆compounds provide a versatile material platform for studying 2D magnetism and relevant phenomena. Establishing ferromagnetism in 2D materials is technologically valuable. Though magnetism is generally tunable via a chemical way, it is challenging to induce ferromagnetism with isovalent chalcogen and bimetallic substitutions inM₂P₂X₆. Here, we report co‐substitution of Cu¹⁺and Cr³⁺for Ni²⁺in Ni₂P₂S₆, creating Cu_xNi_2(1‐x)Cr_xP₂S₆medium‐entropy alloys spanning a full substitution range (x= 0 to 1). Such substitution strategy leads to a unique evolution in crystal structure and magnetic phases that are distinct from traditional isovalent bimetallic doping, with Cu and Cr co‐substitution enhancing ferromagnetic correlations and generating a weak ferromagnetic phase in intermediate compositions. This aliovalent substitution strategy offers a universal approach for tuning layered magnetism in antiferromagnetic systems, which along with the potential for light‐matter interaction and high‐temperature ferroelectricity, can enable multifunctional device applications. 

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5. Bandgap engineering in quasi-1D Zr _1−x Ti _x S ₃ (0 ≤ x ≤ 1) solid solutions

   https://doi.org/10.1039/d5tc02480c  

   Muratov, Dmitry S; Bianco, Ettore; Karpenkov, Dmitry; Castellero, Alberto; Lipatov, Alexey; Maurino, Valter; Sinitskii, Alexander (January 2025, Journal of Materials Chemistry C)

   We synthesized a series of Zr_1−xTi_xS₃solid solutions (0 ≤x≤ 1)viaa direct reaction between Zr–Ti alloys and sulfur vapor at 600 °C. These solid solutions have a tunable bandgap in the 1–2 eV range that linearly increases with the Zr content. 

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