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1. Resolving Mechanical Properties and Morphology Evolution of Free‐Standing Ferroelectric Hf _0.5 Zr _0.5 O ₂

   https://doi.org/10.1002/adem.202101221  

   Tharpe, Troy; Zheng, Xu-Qian; Feng, Philip_X-L; Tabrizian, Roozbeh (October 2021, Advanced Engineering Materials)

   Advances in creating polar structures in atomic‐layered hafnia‐zirconia (Hf_xZr_1−xO₂) films not only augurs extensive growth in studying ferroelectric nanoelectronics and neuromorphic devices, but also spurs opportunities for exploring novel integrated nanoelectromechanical systems (NEMS). Design and implementation of Hf_xZr_1−xO₂NEMS transducers necessitates accurate knowledge of elastic and electromechanical properties. Up to now, all experimental approaches for extraction of morphological content, elastic, and electromechanical properties of Hf_xZr_1−xO₂are based on solidly mounted structures, highly stressed films, and electroded architectures. Unlike Hf_xZr_1−xO₂layers embedded in electronics, NEMS transducers require free‐standing structures with highly contrasted mechanical boundaries and stress profiles. Here, a nanoresonator‐based approach for simultaneous extraction of Young's modulus and residual stress in free‐standing ferroelectric Hf_0.5Zr_0.5O₂films is presented. High quality factor resonance modes of nanomechanical resonators created in predominantly orthorhombic Hf_0.5Zr_0.5O₂films are measured using nondestructive optical transduction. Further, the evolution of morphology during creation of free‐standing Hf_0.5Zr_0.5O₂structures is closely mapped using X‐ray diffraction measurements, clearly showing transformation of ferroelectric orthorhombic to nonpolar monoclinic phase upon stress relaxation. The extracted Young's modulus of 320.0 ± 29.4 GPa and residual stress ofσ = 577.4 ± 24.1 MPa show the closest match with theoretical calculations for orthorhombic Hf_0.5Zr_0.5O₂. 

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2. Emergent properties in the natural composite Ni ₂ MnSb _0.5 Al _0.5

   https://doi.org/10.1088/1361-6463/ab7c9f  

   Samanta, Tamalika; Salas, D; Srihari, V; Karaman, I; Bhobe, P A (May 2020, Journal of Physics D: Applied Physics)
3. Realizing ferroelectric Hf _0.5 Zr _0.5 O ₂ with elemental capping layers

   https://doi.org/10.1116/1.5002558  

   Lin, Yuh-Chen; McGuire, Felicia; Franklin, Aaron D. (January 2018, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
4. Wake-up and fatigue mechanisms in ferroelectric Hf _0.5 Zr _0.5 O ₂ films with symmetric RuO ₂ electrodes

   https://doi.org/10.1063/5.0064145  

   Fields, Shelby S.; Smith, Sean W.; Jaszewski, Samantha T.; Mimura, Takanori; Dickie, Diane A.; Esteves, Giovanni; David Henry, M.; Wolfley, Steve L.; Davids, Paul S.; Ihlefeld, Jon F. (October 2021, Journal of Applied Physics)
5. Epitaxial Ferroelectric Hf _0.5 Zr _0.5 O ₂ with Metallic Pyrochlore Oxide Electrodes

   https://doi.org/10.1002/adma.202006089  

   Zhang, Zimeng; Hsu, Shang‐Lin; Stoica, Vladimir A.; Paik, Hanjong; Parsonnet, Eric; Qualls, Alexander; Wang, Jianjun; Xie, Liang; Kumari, Mukesh; Das, Sujit; et al (March 2021, Advanced Materials)

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