Walelign, Habitamu Y, Cai, Xinxin, Li, Bikun, Barnes, Edwin, and Nichol, John M. Dynamically corrected gates in silicon singlet-triplet spin qubits. Retrieved from https://par.nsf.gov/biblio/10571995. Physical Review Applied 22.6 Web. doi:10.1103/PhysRevApplied.22.064029.

Walelign, Habitamu Y, Cai, Xinxin, Li, Bikun, Barnes, Edwin, & Nichol, John M. Dynamically corrected gates in silicon singlet-triplet spin qubits. Physical Review Applied, 22 (6). Retrieved from https://par.nsf.gov/biblio/10571995. https://doi.org/10.1103/PhysRevApplied.22.064029

Walelign, Habitamu Y, Cai, Xinxin, Li, Bikun, Barnes, Edwin, and Nichol, John M. "Dynamically corrected gates in silicon singlet-triplet spin qubits". Physical Review Applied 22 (6). Country unknown/Code not available: American Physical Society. https://doi.org/10.1103/PhysRevApplied.22.064029. https://par.nsf.gov/biblio/10571995.

@article{osti_10571995,
place = {Country unknown/Code not available}, title = {Dynamically corrected gates in silicon singlet-triplet spin qubits}, url = {https://par.nsf.gov/biblio/10571995}, DOI = {10.1103/PhysRevApplied.22.064029}, abstractNote = {}, journal = {Physical Review Applied}, volume = {22}, number = {6}, publisher = {American Physical Society}, author = {Walelign, Habitamu Y and Cai, Xinxin and Li, Bikun and Barnes, Edwin and Nichol, John M}, }