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The reliability of the plasma etched copper lines with the self-aligned copper oxide passivation layer has been studied with the electromigration stress method. The oxide passivation layer was prepared by plasma oxidation, which covers the entire exposed copper line to prevent the surface oxidation under the ambient condition. The void formation and growth process reflect the line broken mechanism. Voids formed from grain boundary depletion and grain thinning were monitored by optical microscopes. The line failure times with respect to line width and current density were measured. The addition of the oxide passivation layer shortened the lifetime due to the poor heat transfer and copper diffusion, which accelerated the formation and growth of the voids. The narrow line has a longer lifetime than the wide line because of the fewer grain boundaries for flux divergence to form voids. The copper oxide passivation layer was formed self-aligned to the copper line. It also gettered copper atoms diffused from the bulk copper film.
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Study of ion charging effect to improve reactive-ion-etching profile of PbSe grating structures
This research studies the impact of the charging effect on the RIE-etched profile of narrow-slot Lead- Selenide (PbSe) gratings. By decreasing the slot width from 4 to 2 𝜇𝑚, we observed the increased irregularity and RIE-lag in etched profiles.We suggest that the charging effect is the main responsible mechanism for this phenomenon. The accumulated charge on the non-conductive photoresist plays a crucial role in forming this effect. Therefore, introducing a conductive layer can neutralize the accumulated charge and significantly improves the profile. To prove this theory, we introduced a thin layer of copper on the gratings. While without any conductive coating, we failed to etch gratings with a slot width of less than 1 𝜇𝑚, by introducing a copper layer, we succeeded etching gratings with 0.7 𝜇𝑚 slot width with the improved sidewall profiles. Hence, this technique enables us to fabricate sub-micron PbSe gratings with applications of mid-infrared (MIR) devices.
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- Award ID(s):
- 2340060
- PAR ID:
- 10574365
- Publisher / Repository:
- Microelectronic Engineering
- Date Published:
- Journal Name:
- Microelectronic Engineering
- Volume:
- 289
- Issue:
- C
- ISSN:
- 0167-9317
- Page Range / eLocation ID:
- 112170
- Subject(s) / Keyword(s):
- PbSe, Reactive Ion Etching, Mid-infrared wavelength
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1016/j.mee.2024.112170
