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We demonstrate telecommunication-wavelength Pockels electro-optic modulators in thin-film lithium tantalate (TFLT) with superior DC stability compared to equivalent thin-film lithium niobate (TFLN) modulators. Less than 1 dB output power fluctuation for quadrature-biased TFLT is measured compared to 5 dB with TFLN over 46 hours with 12.1 dBm input power. Our TFLT modulators maintain properties similar to those in TFLN: 3.4 Vcm half-wave voltage length product, 39 dB extinction ratio, flat RF electro-optic response from 3-50 GHz, and 0.35 dB on-chip loss. We also show low error-rate data modulation over 0-70°C with TFLT modulators and optical loss of 9 dB/m.
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Broadband Back-Excitation Suppressor with On-chip Asymmetric Metasurface
We demonstrated an insertion loss of 2.2 dB and a back-excitation suppression of 5.1 dB over the 35 nm bandwidth with on-chip asymmetric metasurface.
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- Award ID(s):
- 2338546
- PAR ID:
- 10575802
- Publisher / Repository:
- Optica Publishing Group
- Date Published:
- ISBN:
- 978-1-957171-39-5
- Page Range / eLocation ID:
- ATh1J.1
- Format(s):
- Medium: X
- Location:
- Charlotte, North Carolina
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Conference Paper:
- https://doi.org/10.1364/CLEO_AT.2024.ATh1J.1
