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  • One Ferroelectric Field-Effect Transistor and One Capacitor Ternary Content-Addressable Memory Based on Charge Domain Sensing Mechanism
Title: One Ferroelectric Field-Effect Transistor and One Capacitor Ternary Content-Addressable Memory Based on Charge Domain Sensing Mechanism
Award ID(s):
2235472
PAR ID:
10579765
Author(s) / Creator(s):
; ;
Publisher / Repository:
IEEE
Date Published:
ISBN:
979-8-3315-1713-7
Page Range / eLocation ID:
1 to 3
Format(s):
Medium: X
Location:
Singapore, Singapore
Sponsoring Org:
National Science Foundation
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