Poche, Thomas, Wirth, William, and Jang, Seonhee. Chemical structure characteristics of flexible low-k SiCOH thin films etched by inductively coupled plasma-reactive ion etching process using FTIR and XPS spectra analysis. Retrieved from https://par.nsf.gov/biblio/10583061. Microelectronic Engineering 292.C Web. doi:10.1016/j.mee.2024.112221.

Poche, Thomas, Wirth, William, & Jang, Seonhee. Chemical structure characteristics of flexible low-k SiCOH thin films etched by inductively coupled plasma-reactive ion etching process using FTIR and XPS spectra analysis. Microelectronic Engineering, 292 (C). Retrieved from https://par.nsf.gov/biblio/10583061. https://doi.org/10.1016/j.mee.2024.112221

Poche, Thomas, Wirth, William, and Jang, Seonhee. "Chemical structure characteristics of flexible low-k SiCOH thin films etched by inductively coupled plasma-reactive ion etching process using FTIR and XPS spectra analysis". Microelectronic Engineering 292 (C). Country unknown/Code not available: Microelectron Engineering. https://doi.org/10.1016/j.mee.2024.112221. https://par.nsf.gov/biblio/10583061.

@article{osti_10583061,
place = {Country unknown/Code not available}, title = {Chemical structure characteristics of flexible low-k SiCOH thin films etched by inductively coupled plasma-reactive ion etching process using FTIR and XPS spectra analysis}, url = {https://par.nsf.gov/biblio/10583061}, DOI = {10.1016/j.mee.2024.112221}, abstractNote = {}, journal = {Microelectronic Engineering}, volume = {292}, number = {C}, publisher = {Microelectron Engineering}, author = {Poche, Thomas and Wirth, William and Jang, Seonhee}, }