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Recent advances in thermophotovoltaic (TPV) power generation have produced notable gains in efficiency, particularly at very high emitter temperatures. However, there remains substantial room for improving TPV conversion of waste, solar, and nuclear heat streams at temperatures below 1,100°C. Here, we demonstrate the concept of transmissive spectral control that enables efficient recuperation of below-bandgap photons by allowing them to transmit through the cell to be absorbed by a secondary emitter. We fabricate a semitransparent TPV cell consisting of a thin InGaAs–InP heterojunction membrane supported by an infrared-transparent heat-conducting substrate. The device absorbs less than 1% of below-bandgap radiation, resulting in a TPV efficiency of 32.5% at an emitter temperature of 1,036°C. To our knowledge, this represents an 8% absolute improvement (~33% relative) in efficiency relative to the best TPV devices at such low temperatures. By enabling near-zero photon loss, the semitransparent architecture facilitates high TPV efficiencies over a wide range of applications.
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Large-area 1D selective emitter for thermophotovoltaic applications in the mid-infrared
Two- or three-dimensionally patterned subwavelength structures, also known as metamaterials, have the advantage of arbitrarily engineerable optical properties. In thermophotovoltaic (TPV) applications, metamaterials are commonly used to optimize the emitter’s radiation spectrum for various source temperatures. The output power of a TPV device is proportional to the photon flux, which is proportional to the emitter size. However, using 2D or 3D metamaterials imposes challenges to realizing large emitters since fabricating their subwavelength features typically involves complicated fabrication processes and is highly time-consuming. In this work, we demonstrate a large-area (78 cm2) thermal emitter. This emitter is simply fabricated with one-dimensional layers of silicon (Si) and chromium (Cr), and therefore, it can be easily scaled up to even larger sizes. The emissivity spectrum of the emitter is measured at 802 K, targeting an emission peak in the mid-infrared. The emissivity peak is ∼0.84 at the wavelength of 3.75 μm with a 1.2 μm bandwidth. Moreover, the emission spectrum of our emitter can be tailored for various source temperatures by changing the Si thickness. Therefore, the results of this work can lead to enabling TPV applications with higher output power and lower fabrication cost.
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- Award ID(s):
- 2120581
- PAR ID:
- 10584057
- Publisher / Repository:
- American Vacuum Society
- Date Published:
- Journal Name:
- Journal of Vacuum Science & Technology B
- Volume:
- 41
- Issue:
- 1
- ISSN:
- 2166-2746
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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