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Oxygen vacancies ( V O • • ) play a critical role as defects in complex oxides in establishing functionality in systems including memristors, all-oxide electronics, and electrochemical cells that comprise metal-insulator-metal or complex oxide heterostructure configurations. Improving oxide-oxide interfaces necessitates a direct, spatial understanding of vacancy distributions that define electrochemically active regions. We show vacancies deplete over micrometer-level distances in Nb-doped SrTiO 3 (Nb:SrTiO 3 ) substrates due to deposition and post-annealing processes. We convert the surface potential across a strontium titanate/yttria-stabilized zirconia (STO/YSZ) heterostructured film to spatial (<100 nm) vacancy profiles within STO using ( T = 500°C) in situ scanning probes and semiconductor analysis. Oxygen scavenging occurring during pulsed laser deposition reduces Nb:STO substantially, which partially reoxidizes in an oxygen-rich environment upon cooling. These results (i) introduce the means to spatially resolve quantitative vacancy distributions across oxide films and (ii) indicate the mechanisms by which oxide thin films enhance and then deplete vacancies within the underlying substrate.
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Metallicity in SrTiO3 substrates induced by pulsed laser deposition
Oxygen deficiency has been known to induce metallic conduction in bulk and thin film SrTiO3 (STO). Here, we report on the metallicity of STO substrates induced by the pulsed laser deposition (PLD) process of STO films under various oxygen-poor growth conditions. Depositions as short as 2 min result in conduction through the STO substrate. Films grown on other substrates are insulating, and STO substrates annealed under the same growth conditions without laser ablation remain insulating. By varying background gas composition during deposition, we find that the transport behavior transitions from metallic to insulating behavior at progressively higher ambient pressures for O2, 99% N2/1% O2, N2, and Ar. Metallic behavior persists to deposition pressures as high as 10−2 Torr in Ar. These results suggest that, during the PLD process, the deposition kinetics and plume energy are a dominant factor in the formation of oxygen vacancies which then diffuse into the substrate. Understanding these mechanisms is crucial to prevent STO substrate reduction during PLD of films which require low O2 partial pressures during growth.
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- PAR ID:
- 10594707
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- APL Materials
- Volume:
- 7
- Issue:
- 1
- ISSN:
- 2166-532X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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