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Excited by the great success of metal halide perovskites in the optoelectronic and electro-optic fields and the interesting emerging physics (Rashba splitting, quantum anomalous hall effect) of layered metal halides, metal halides have recently been attracting significant attentions from both research and industrial communities. It is shown that most progresses have been made when these materials are obtained at reduced dimensions. Among several growth methods, vapor phase epitaxy has been demonstrated with a universal control on morphology, phase, and composition. We thus believe that a thorough understanding on the physical properties and on the growth of general metal halide compounds at reduced dimensions would be very beneficial in the study of recent perovskites and layered metal halide materials. This review covers the physical properties of most studied metal halides and summarizes the vapor phase epitaxial growth knowledge collected in the past century. We hope that this comprehensive review could be helpful in designing new physical properties and in planning growth parameters for emerging metal halide crystals.
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Epitaxial and quasiepitaxial growth of halide perovskites: New routes to high end optoelectronics
Motivated by the exciting properties of metal halide perovskites in photovoltaic applications, there is an evolving need to further explore the limitations of this class of materials in broader fields and high end optoelectronics, which requires better control over the film structure, defect levels, and quality. Epitaxial growth has been ubiquitously deployed in the semiconducting industry. This affords routes to precisely align the atomic arrangement to control the structure and strain and achieve the highest levels of optoelectronic performance. In this review, the recent emergence and progress in the epitaxial growth of metal halide perovskites are introduced within the context of epitaxial and quasiepitaxial approaches, and recent advances are surveyed from growth methods to application integration. The main criteria distinguishing epitaxy and quasiepitaxy, i.e., lattice matching and ordering, can be deployed to direct the selection of proper substrates, growth methods, and precursors for various applications.
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- Award ID(s):
- 1807573
- PAR ID:
- 10595050
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- APL Materials
- Volume:
- 8
- Issue:
- 10
- ISSN:
- 2166-532X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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