An official website of the United States government
CdO has drawn much recent interest as a high-room-temperature-mobility oxide semiconductor with exciting potential for mid-infrared photonics and plasmonics. Wide-range modulation of carrier density in CdO is of interest both for fundamental reasons (to explore transport mechanisms in single samples) and for applications (in tunable photonic devices). Here, we thus apply ion-gel-based electrolyte gating to ultrathin epitaxial CdO(001) films, using transport, x-ray diffraction, and atomic force microscopy to deduce a reversible electrostatic gate response from −4 to +2 V, followed by rapid film degradation at higher gate voltage. Further advancing the mechanistic understanding of electrolyte gating, these observations are explained in terms of low oxygen vacancy diffusivity and high acid etchability in CdO. Most importantly, the 6-V-wide reversible electrostatic gating window is shown to enable ten-fold modulation of the Hall electron density, a striking voltage-induced metal–insulator transition, and 15-fold variation of the electron mobility. Such modulations, which are limited only by unintentional doping levels in ultrathin films, are of exceptional interest for voltage-tunable devices.
more »
« less
What controls electrostatic vs electrochemical response in electrolyte-gated materials? A perspective on critical materials factors
Electrolyte-gate transistors are a powerful platform for control of material properties, spanning semiconducting behavior, insulator-metal transitions, superconductivity, magnetism, optical properties, etc. When applied to magnetic materials, for example, electrolyte-gate devices are promising for magnetoionics, wherein voltage-driven ionic motion enables low-power control of magnetic order and properties. The mechanisms of electrolyte gating with ionic liquids and gels vary from predominantly electrostatic to entirely electrochemical, however, sometimes even in single material families, for reasons that remain unclear. In this Perspective, we compare literature ionic liquid and ion gel gating data on two rather different material classes—perovskite oxides and pyrite-structure sulfides—seeking to understand which material factors dictate the electrostatic vs electrochemical gate response. From these comparisons, we argue that the ambient-temperature anion vacancy diffusion coefficient (not the vacancy formation energy) is a critical factor controlling electrostatic vs electrochemical mechanisms in electrolyte gating of these materials. We, in fact, suggest that the diffusivity of lowest-formation-energy defects may often dictate the electrostatic vs electrochemical response in electrolyte-gated inorganic materials, thereby advancing a concrete hypothesis for further exploration in a broader range of materials.
more »
« less
- Award ID(s):
- 2011401
- PAR ID:
- 10595170
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- APL Materials
- Volume:
- 10
- Issue:
- 4
- ISSN:
- 2166-532X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
The manipulation of ions in complex oxide materials can be used to mimic brain-like plasticity through changes to the resistivity of a neuromorphic device. Advances in the design of more energy efficient devices require improved understanding of how ions migrate within a material and across its interface. We investigate the exchange of oxygen and hydrogen in a model SrCoOx epitaxial film—a material that transitions between a ferromagnetic metal and antiferromagnetic insulator depending on the oxygen concentration. Changes to the film during ionic liquid gating were measured by in situ synchrotron x-ray techniques as a function of time and gate voltage, examining the reversibility of the oxide over one complete gating cycle. We find that the out-of-plane lattice constant and oxygen vacancy concentration of SrCoOx are largely reversible although changes were observed in the ordered vacancy structure. Our results provide much needed insight into electrolyte-gated phase behavior in the transition metal oxides.more » « less
-
ABSTRACT: Perovskite cobaltites have emerged as archetypes for electrochemical control of materials properties in electrolytegate devices. Voltage-driven redox cycling can be performed between fully oxygenated perovskite and oxygen-vacancy-ordered brownmillerite phases, enabling exceptional modulation of the crystal structure, electronic transport, thermal transport, magnetism, and optical properties. The vast majority of studies, however, have focused heavily on the perovskite and brownmillerite end points. In contrast, here we focus on hysteresis and reversibility across the entire perovskite ↔ brownmillerite topotactic transformation, combining gate-voltage hysteresis loops, minor hysteresis loops, quantitative operando synchrotron X-ray diffraction, and temperature-dependent (magneto)transport, on ion-gel-gated ultrathin (10-unit-cell) epitaxial La0.5Sr0.5CoO3−δ films. Gate-voltage hysteresis loops combined with operando diffraction reveal a wealth of new mechanistic findings, including asymmetric redox kinetics due to differing oxygen diffusivities in the two phases, nonmonotonic transformation rates due to the first-order nature of the transformation, and limits on reversibility due to first-cycle structural degradation. Minor loops additionally enable the first rational design of an optimal gate-voltage cycle. Combining this knowledge, we demonstrate state-of-the-art nonvolatile cycling of electronic and magnetic properties, encompassing >105 transport ON/OFF ratios at room temperature, and reversible metal−insulator−metal and ferromagnet−nonferromagnet−ferromagnet cycling, all at 10-unit-cell thickness with high room-temperature stability. This paves the way for future work to establish the ultimate cycling frequency and endurance of such devices. KEYWORDS: electrolyte gating, magnetoionics, complex oxides, perovskite−brownmillerite transformation, hysteresis, reversibilitymore » « less
-
Solid-state batteries (SSBs) hold the potential to enhance the energy density, power density, and safety of conventional lithium-ion batteries. The theoretical promise of SSBs is predicated on the mechanistic design and comprehensive analysis of various solid–solid interfaces and microstructural features within the system. The spatial arrangement and composition of constituent phases (e.g., active material, solid electrolyte, binder) in the solid-state cathode dictate critical characteristics such as solid–solid point contacts or singularities within the microstructure and percolation pathways for ionic/electronic transport. In this work, we present a comprehensive mesoscale discourse to interrogate the underlying microstructure-coupled kinetic-transport interplay and concomitant modes of resistances that evolve during electrochemical operation of SSBs. Based on a hierarchical physics-based analysis, the mechanistic implications of solid–solid point contact distribution and intrinsic transport pathways on the kinetic heterogeneity is established. Toward designing high-energy-density SSB systems, the fundamental correlation between active material loading, electrode thickness and electrochemical response has been delineated. We examine the paradigm of carbon-binder free cathodes and identify design criteria that can facilitate enhanced performance with such electrode configurations. A mechanistic design map highlighting the dichotomy in kinetic and ionic/electronic transport limitations that manifest at various SSB cathode microstructural regimes is established.more » « less
-
Abstract Electrostatic gating of two-dimensional (2D) materials with ionic liquids (ILs), leading to the accumulation of high surface charge carrier densities, has been often exploited in 2D devices. However, the intrinsic liquid nature of ILs, their sensitivity to humidity, and the stress induced in frozen liquids inhibit ILs from constituting an ideal platform for electrostatic gating. Here we report a lithium-ion solid electrolyte substrate, demonstrating its application in high-performance back-gated n-type MoS2and p-type WSe2transistors with sub-threshold values approaching the ideal limit of 60 mV/dec and complementary inverter amplifier gain of 34, the highest among comparable amplifiers. Remarkably, these outstanding values were obtained under 1 V power supply. Microscopic studies of the transistor channel using microwave impedance microscopy reveal a homogeneous channel formation, indicative of a smooth interface between the TMD and underlying electrolytic substrate. These results establish lithium-ion substrates as a promising alternative to ILs for advanced thin-film devices.more » « less
