We propose and simulate a compact (∼29.5 µm-long) nonvolatile polarization switch based on an asymmetric Sb2Se3-clad silicon photonic waveguide. The polarization state is switched between TM0and TE0mode by modifying the phase of nonvolatile Sb2Se3between amorphous and crystalline. When the Sb2Se3is amorphous, two-mode interference happens in the polarization-rotation section resulting in efficient TE0-TM0conversion. On the other hand, when the material is in the crystalline state, there is little polarization conversion because the interference between the two hybridized modes is significantly suppressed, and both TE0and TM0modes go through the device without any change. The designed polarization switch has a high polarization extinction ratio of > 20 dB and an ultra-low excess loss of < 0.22 dB in the wavelength range of 1520-1585 nm for both TE0and TM0modes.
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InP-based polarization rotator-splitter for mid-infrared photonic integration circuits
We design and experimentally demonstrate the propagation loss of waveguides and the operation of a single-step etched polarization rotator-splitter (PRS) in low index contrast InGaAs-InP material system at 6.15 μm. Propagation losses 4.19 dB/cm for TM mode and 3.25 dB/cm for TE mode are measured. The designed PRS can achieve near 100% conversion efficiency. This study enables the possibility of monolithic integration of quantum cascade devices with TM-polarized characteristics and TE-guiding two-dimensional slotted photonic crystal waveguide gas sensors for on-chip monolithic absorption spectroscopy.
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- Award ID(s):
- 1711824
- PAR ID:
- 10597462
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- AIP Advances
- Volume:
- 9
- Issue:
- 1
- ISSN:
- 2158-3226
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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