Abstract Nanohybrids consisting of graphene and colloidal semiconductor quantum dots (QDs/graphene) can combine the benefits of strong quantum confinement in the constituent components, such as high carrier mobility in graphene and large exciton binding energy in QDs, to enable extraordinary photoconductive gain and hence high photoresponse. Furthermore, QDs/graphene nanohybrids are inherently flexible, making them ideal for flexible photodetectors. Despite exciting progress made in rigid and flexible QDs/graphene photodetectors in broadband from UV to short-wave infrared, flexible middle-wave infrared (MWIR) photodetectors remain a challenge. Herein, we report the first success in fabrication of HgTe QDs/graphene nanohybrid ultrabroadband (400–4000 nm wavelength) photodetectors on flexible polyimide substrates via resolving critical issues of device fabrication on flexible substrates, which allowed flexible device performance approaching their counterparts on rigid substrates. Specifically, the flexible HgTe QDs/graphene nanohybrids photodetectors exhibited high responsivity (R*) across the ultrabroadband spectrum at room temperature. At 550 nm, 1.5 μm and 4.0 μm wavelengths, anR* of up to 0.65 AW−1, 5.7 × 10−3AW−1and 0.9 × 10−3AW−1were achieved respectively. Bending tests confirmed performance stability of the flexible HgTe QDs/graphene nanohybrids photodetectors under repeated bending with up to 5.5 mm radius of curvature. Images taken in the ultrabroadband while the photodetectors in flat and bent states both show promising imaging quality. This result illustrates the potential applications of the uncooled, flexible HgTe QDs/graphene nanohybrids photodetectors in the ultrabroadband range of 400–4000 nm.
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Decoupling of Photocurrent and Dark Current for Extraordinary Detectivity in Uncooled Middle-Wavelength Infrared Nanohybrid Photodetectors
Nanohybrids of graphene and colloidal semiconductor quantum dots (QDs/Gr) provide a promising quantum sensing scheme for photodetection. Despite exciting progress made in QDs/Gr photodetectors in broadband from ultraviolet to short-wave infrared, the device performance is limited in middle-wave infrared (MWIR) detection. A fundamental question arises as to whether the thermal noiseinduced dark current and hence poor signal-to-noise ratio in conventional uncooled MWIR photodetectors persist in QDs/ Gr nanohybrids. Herein, we investigated noise, responsivity (R*), and specific detectivity (D*) in HgTe QDs/Gr nanohybrids, revealing that the noise and R* are decoupled in nanohybrids and each can be optimized independently toward its theoretical limit. Specifically, the noise in the QDs/Gr nanohybrids is dominated by that of graphene with a negligible effect from the dark current in HgTe QDs and can be optimized to its intrinsic limit by removing charge doping of adsorbed polar molecules on graphene. Furthermore, the R* is proportional to the photoconductive gain enabled by the strong quantum confinement in QDs and Gr. Achieving high gain in the MWIR spectrum, however, is challenging and requires elimination of charge traps primarily from the surface states of the narrow-bandgap semiconductor HgTe QDs. Using grain-rotation-induced grain-coalescence growth of single-layer and core/shell HgTe QDs, we show the that HgTe QDs surface states caused by Te deficiency can be dramatically suppressed, resulting in high gain up to 4.0 × 107 in the MWIR spectrum. The optimized noise and R* have led to high uncooled MWIR D* up to 2.4 × 1011 Jones, making nanohybrids promising to surpass the fundamental dark-current limit in conventional photodetectors.
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- PAR ID:
- 10599057
- Publisher / Repository:
- ACS
- Date Published:
- Journal Name:
- ACS Nano
- Volume:
- 19
- Issue:
- 9
- ISSN:
- 1936-0851
- Page Range / eLocation ID:
- 8520 to 8538
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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