Photodetectors based on colloidal quantum dots (QD)/graphene nanohybrids are quantum sensors due to strong quantum confinement in both QD and graphene. The optoelectronic properties of QD/graphene nanohybrids are affected by the quantum physics that predicts a high photoconductive gain and hence photoresponsivity (
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Abstract R *) depending on the pixel length (L ) asR *∝L −2. Experimental confirmation of the effect of the pixel geometric parameters on the optoelectronic properties of the QD/graphene photodetector is therefore important to elucidate the underlying quantum physics. Motivated by this, an array of PbS QDs/graphene nanohybrid photodetectors are designed with variable QD/graphene pixel lengthL and width (W ) in the range of 10–150 µm for a study ofR* , noise, and specific detectivity (D *) in a broad spectrum of 400–1500 nm. Intriguingly,R* exhibits a monotonic decreasing trend of 1/L 2while being independent ofW , confirming experimentally the theoretical prediction. Interestingly, this geometric effect on the photoresponsivity seems to be partially compensated by that in noise, leading toD *independent ofL andW at wavelengths in the ultraviolet‐visible‐near infrared range. This result sheds light on the quantum physics underlying the optoelectronic process in QD/graphene nanohybrids, which is important to the design of high‐quality QD/graphene photodetectors and imaging systems.Free, publicly-accessible full text available May 1, 2025 -
Abstract Ultrathin (sub-2 nm) Al2O3/MgO memristors were recently developed using an
in vacuo atomic layer deposition (ALD) process that minimizes unintended defects and prevents undesirable leakage current. These memristors provide a unique platform that allows oxygen vacancies (VO) to be inserted into the memristor with atomic precision and study how this affects the formation and rupture of conductive filaments (CFs) during memristive switching. Herein, we present a systematic study on three sets of ultrathin Al2O3/MgO memristors with VO-doping via modular MgO atomic layer insertion into an otherwise pristine insulating Al2O3atomic layer stack (ALS) using anin vacuo ALD. At a fixed memristor thickness of 17 Al2O3/MgO atomic layers (∼1.9 nm), the properties of the memristors were found to be affected by the number and stacking pattern of the MgO atomic layers in the Al2O3/MgO ALS. Importantly, the trend of reduced low-state resistance and the increasing appearance of multi-step switches with an increasing number of MgO atomic layers suggests a direct correlation between the dimension and dynamic evolution of the conducting filaments and the VOconcentration and distribution. Understanding such a correlation is critical to an atomic-scale control of the switching behavior of ultrathin memristors. -
One-dimensional artificial pinning centers (1D-APCs) in YBa2Cu3O7-x nanocomposite films provide strong collective pinning at magnetic field B//c-axis. In this work, we reveal a 1D-APC/YBa2Cu3O7-x interface is preferred for high pinning efficiency of individual 1D-APCs including BaHfO3 and BaZrO3. The coherent 1D-APC/YBa2Cu3O7-x interface may be obtained via either growth of the nanocomposite films at optimal condition or Ca-diffusion to dynamically reduce the interface strain during the nanocomposite film growth. Interestingly, the high pinning efficiency of the 1D-APCs with coherent interfaces with YBCO not only lead to a high critical current density (Jc) in magnetic fields up to 9.0 T at H//c-axis but also enhanced Jc over a larger angular range when H is away from H//c-axis up to θ=60-80 degree than that in the case the interface is defective. This result suggests the importance of understanding and engineering the APC/YBCO interface for optimal pinning in nanocomposite films.more » « lessFree, publicly-accessible full text available May 1, 2025
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Colloidal quantum dots/graphene (QD/Gr) nanohybrids have been studied intensively for photodetection in a broadband spectrum including ultraviolet, visible, near-infrared, and shortwave infrared (UV−vis-NIR-SWIR). Since the optoelectronic process in the QD/Gr nanohybrid relies on the photogenerated charge carrier transfer from QDs to graphene, understanding the role of the QD−QD and QD−Gr interfaces is imperative to the QD/Gr nanohybrid photodetection. Herein, a systematic study is carried out to probe the effect of these interfaces on the noise, photoresponse, and specific detectivity in the UV−vis-NIR-SWIR spectrum. Interestingly, the photoresponse has been found to be negligible without a 3-mercaptopropionic acid (MPA) ligand exchange, moderate with a single ligand exchange after all QD layers are deposited on graphene, and maximum if it is performed after each QD layer deposition up to five layers of total QD thickness of 260−280 nm. Furthermore, exposure of graphene to C-band UV (UVC) for a short period of 4−5 min before QD deposition leads to improved photoresponse via removal of polar molecules at the QD/Gr interface. With the combination of the MPA ligand exchange and UVC exposure, optimal optoelectronic properties can be obtained on the PbS QD/Gr nanohybrids with high specific detectivity up to 2.6 × 1011, 1.5 × 1011, 5 × 1010, and 1.9 × 109 Jones at 400, 550, 1000, and 1700 nm, respectively, making the nanohybrids promising for broadband photodetection.more » « lessFree, publicly-accessible full text available April 9, 2025
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Surface-enhanced Raman spectroscopy (SERS) is an important analytical tool with ultrahigh sensitivity that depends on electromagnetic mechanism (EM) and chemical mechanism (CM). The CM relies on efficient charge transfer between the probe molecules and SERS substrates, which means engineering the molecule attachment and the energy level alignment at the molecule/substrate interface is critical to optimal CM enhancement. Herein, we report enhanced CM of Rhodamine 6G (R6G) on graphene SERS substrates using combined C-band ultraviolet (UVC) irradiation and Pt nanoparticle (Pt-NPs) decoration using atomic layer deposition (ALD). An enhancement of 270% was obtained in the former, which is ascribed to the graphene surface activation and p-doping on graphene for improved R6G molecule attachment and charge transfer by its surface change from hydrophobic to hydrophilic and the down-shift of the Fermi energy (p-doping) after UVC exposure. The Pt-NPs decoration adds an additional enhancement of 250% by further p-doping graphene, which shifts the graphene’s Fermi energy to promote charge (hole) transfer at the R6G/graphene interface. Remarkably, the combination of the UVC irradiation and Pt-NPs decoration has led to enhanced R6G SERS sensitivity of 5 × 10−9 M, which represents a two-orders of magnitude enhancement over that on the pristine graphene and illustrates the importance of graphene engineering for optimal probe molecule attachment and the energy level alignment at the molecule/graphene interface toward achieving high-performance SERS biosensing.more » « less