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Single-photon avalanche diodes (SPADs) that are sensitive to photons in the Short-wave infrared and extended short-wave infrared (SWIR and eSWIR) spectra are important components for communication, ranging, and low-light level imaging. The high gain, low excess noise factor, and widely tunable bandgap of AlxIn1-xAsySb1-yavalanche photodiodes (APDs) make them a suitable candidate for these applications. In this work, we report single-photon-counting results for a separate absorption, charge, and multiplication (SACM) Geiger-mode SPAD within a gated-quenching circuit. The single-photon avalanche probabilities surpass 80% at 80 K, corresponding with single-photon detection efficiencies of 33% and 12% at 1.55 µm and 2 µm, respectively.
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This content will become publicly available on February 24, 2026
Analysis of the effect of different scattering mechanisms on the excess noise behavior of Sb-based avalanche photodiodes
In optical applications where avalanche photodiodes (APDs) provide the benefit of high sensitivity, Sb-based materials systems such as AlInAsSb and AlGaAsSb have shown extremely low excess noise factors. The Monte Carlo (MC) model described in this work reveals the effect of high alloy scattering on the excess noise factor in these material systems. A comparison between the excess noise factor of different combinations of scattering rates is investigated. Furthermore, the ionization path length probability distribution is presented for AlInAsSb APDs with different scattering mechanisms. Good agreement is achieved between simulation results and experimental measurements.
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- Award ID(s):
- 2430629
- PAR ID:
- 10613716
- Publisher / Repository:
- Optica Publishing Group
- Date Published:
- Journal Name:
- Optics express
- ISSN:
- 1094-4087
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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