Yang, Zineng, Ma, Yunwei, Porter, Matthew, Gong, Hehe, Du, Zhonghao, Wang, Han, Luo, Yi, Wang, Lai, and Zhang, Yuhao. Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN. Retrieved from https://par.nsf.gov/biblio/10614902. IEEE Transactions on Electron Devices 71.9 Web. doi:10.1109/TED.2024.3433837.

Yang, Zineng, Ma, Yunwei, Porter, Matthew, Gong, Hehe, Du, Zhonghao, Wang, Han, Luo, Yi, Wang, Lai, & Zhang, Yuhao. Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN. IEEE Transactions on Electron Devices, 71 (9). Retrieved from https://par.nsf.gov/biblio/10614902. https://doi.org/10.1109/TED.2024.3433837

Yang, Zineng, Ma, Yunwei, Porter, Matthew, Gong, Hehe, Du, Zhonghao, Wang, Han, Luo, Yi, Wang, Lai, and Zhang, Yuhao. "Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN". IEEE Transactions on Electron Devices 71 (9). Country unknown/Code not available: IEEE. https://doi.org/10.1109/TED.2024.3433837. https://par.nsf.gov/biblio/10614902.

@article{osti_10614902,
place = {Country unknown/Code not available}, title = {Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN}, url = {https://par.nsf.gov/biblio/10614902}, DOI = {10.1109/TED.2024.3433837}, abstractNote = {}, journal = {IEEE Transactions on Electron Devices}, volume = {71}, number = {9}, publisher = {IEEE}, author = {Yang, Zineng and Ma, Yunwei and Porter, Matthew and Gong, Hehe and Du, Zhonghao and Wang, Han and Luo, Yi and Wang, Lai and Zhang, Yuhao}, }