Abstract We generalize a magnetogram-matching Biot–Savart law (BSl) from planar to spherical geometry. For a given coronal current densityJ, this law determines the magnetic field whose radial component vanishes at the surface. The superposition of with a potential field defined by a given surface radial field,Br, provides the entire configuration whereBrremains unchanged by the currents. Using this approach, we (1) upgrade our regularized BSls for constructing coronal magnetic flux ropes (MFRs) and (2) propose a new method for decomposing a measured photospheric magnetic field as , where the potential,Bpot, toroidal,BT, and poloidal, , fields are determined byBr,Jr, and the surface divergence ofB–Bpot, respectively, all derived from magnetic data. OurBTis identical to the one in the alternative Gaussian decomposition by P. W. Schuck et al., whileBpotand are different from their poloidal fields and , which arepotentialin the infinitesimal proximity to the upper and lower side of the surface, respectively. In contrast, our has no such constraints and, asBpotandBT, refers to thesameupper side of the surface. In spite of these differences, for a continuousJdistribution across the surface,Bpotand are linear combinations of and . We demonstrate that, similar to the Gaussian method, our decomposition allows one to identify the footprints and projected surface-location of MFRs in the solar corona, as well as the direction and connectivity of their currents.
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The proximity effect and critical field behavior of Re/Al bilayers
Abstract We report the perpendicular critical fieldHc2properties of disordered Re-Al bilayers via magneto-transport measurements. The bilayers consisted of a nm bottom layer of Re and an upper Al layer with thickness varying betweendAl = 0 − 3 nm. We find that in this range of Al thicknesses, the bilayer transition temperatureTcincreases with increasing Al thickness, although their monolayer counterparts have . Furthermore,Hc2of the bilayers has a local maximum at an Al coverage of 1.5 nm with a critical field that is 50% larger than that of the standalone 3 nm Re film. At higher Al thicknessesHc2drops rapidly but remains more than an order of magnitude greater that that of comparable thickness standalone Al film. Our data show that a thin, disordered Re under-layer can dramatically increase the magnetic field tolerance of the Al over-layer. This would allow one to retain the desirable chemical and metallurgical properties of Al without sacrificing high field compatibility in quantum circuits, such as topological qubit devices and superinductor circuits.
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- Award ID(s):
- 2302420
- PAR ID:
- 10618665
- Publisher / Repository:
- IOP publishing
- Date Published:
- Journal Name:
- Materials Research Express
- Volume:
- 12
- Issue:
- 4
- ISSN:
- 2053-1591
- Page Range / eLocation ID:
- 046001
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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