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The electrical properties of graphene on dielectric substrates, such as silicon carbide (SiC), have received much attention due to their interesting applications. This work presents a method to grow graphene on a 6H-SiC substrate at a pressure of 35 Torr by using the hot filament chemical vapor deposition (HFCVD) technique. The graphene deposition was conducted in an atmosphere of methane and hydrogen at a temperature of 950 °C. The graphene films were analyzed using Raman spectroscopy, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray, and X-ray photoelectron spectroscopy. Raman mapping and AFM measurements indicated that few-layer and multilayer graphene were deposited from the external carbon source depending on the growth parameter conditions. The compositional analysis confirmed the presence of graphene deposition on SiC substrates and the absence of any metal involved in the growth process.
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This content will become publicly available on May 1, 2026
Solution-processed multifunctional graphene and Graphene/MoS2 heterostructure films
W e present a scalable solution-processing method for fabricating high-quality graphene and graphene/1T-MoS 2 heterostructure films. The process begins with the synthesis of potassium-intercalated graphite (KC 8 ), which is exfoliated in tetrahydrofuran (THF) to produce stable dispersions of negatively charged (electron rich) graphene sheets. The graphene is subsequently transferred to water, forming a surfactant-free aqueous dispersion suitable for creating homogenous graphene films via vacuum filtration and stamping. Additionally, graphene is combined with 1T-MoS 2 nanosheets to fabricate graphene/1T-MoS 2 bulk heterostructure films. Comprehensive characterization, including X-ray diffraction (XRD), absorption spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy ( TEM), Raman spectroscopy, and X-ray photon emission spectroscopy (XPS), reveals that the heterostructure films exhibit enhanced optical and electronic properties, including improved light absorption, which could lead to novel photo-responsive devices. Raman spectroscopy shows significant changes in the graphene’s structural a nd electronic properties upon interaction with MoS 2 , indicating strong interlayer coupling and potential charge transfer between the layered components. The g raphene films demonstrate highly sensitive detection of dopamine (DA), while the graphene/1T-MoS 2 b ulk heterostructure films exhibit capacitance values up to 3 8.3 Fg − 1 at 5 mV/s in non-aqueous electrolytes. These results highlight the potential of these films for advanced applications in molecular sensing and energy storage.
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- Award ID(s):
- 2113864
- PAR ID:
- 10620735
- Publisher / Repository:
- Elsevier
- Date Published:
- Journal Name:
- Carbon
- Volume:
- 238
- Issue:
- C
- ISSN:
- 0008-6223
- Page Range / eLocation ID:
- 120220
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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