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1. Formation of Stable Metal Halide Perovskite/Perovskite Heterojunctions

   https://doi.org/10.1021/acsenergylett.0c01609  

   Clark, Catherine P.; Mann, Jennifer E.; Bangsund, John S.; Hsu, Wan-Ju; Aydil, Eray S.; Holmes, Russell J. (November 2020, ACS Energy Letters)
2. Two-Dimensional Halide Pb-Perovskite–Double Perovskite Epitaxial Heterostructures

   https://doi.org/10.1021/jacs.3c06127  

   Singh, Ajeet; Yuan, Biao; Rahman, Md. Habibur; Yang, Hanjun; De, Angana; Park, Jee Yung; Zhang, Shuchen; Huang, Libai; Mannodi-Kanakkithodi, Arun; Pennycook, Timothy J.; et al (September 2023, Journal of the American Chemical Society)
3. Perovskite‐Derivative Valleytronics

   https://doi.org/10.1002/adma.202004111  

   Liang, Jia; Fang, Qiyi; Wang, Hua; Xu, Rui; Jia, Shuai; Guan, Yuxuan; Ai, Qing; Gao, Guanhui; Guo, Hua; Shen, Kaijun; et al (October 2020, Advanced Materials)

   Abstract Halide perovskites are revolutionizing the renewable energy sector owing to their high photovoltaic efficiency, low manufacturing cost, and flexibility. Their remarkable mobility and long carrier lifetime are also valuable for information technology, but fundamental challenges like poor stability under an electric field prevent realistic applications of halide perovskites in electronics. Here, it is discovered that valleytronics is a promising route to leverage the advantages of halide perovskites and derivatives for information storage and processing. The synthesized all‐inorganic lead‐free perovskite derivative, Cs₃Bi₂I₉, exhibits strong light–matter interaction and parity‐dependent optically addressable valley degree of freedom. Robust optical helicity in all odd‐layer‐number crystals with inversion symmetry breaking is observed, indicating excitonic coherence extending well beyond 11 layers. The excellent optical and valley properties of Cs₃Bi₂I₉arise from the unique parallel bands, according to first principles calculations. This discovery points to new materials design principles for scalable valleytronic devices and demonstrates the promise of perovskite derivatives beyond energy applications. 

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4. Two-dimensional perovskite templates for durable, efficient formamidinium perovskite solar cells

   https://doi.org/10.1126/science.abq6993  

   Sidhik, Siraj; Metcalf, Isaac; Li, Wenbin; Kodalle, Tim; Dolan, Connor J; Khalili, Mohammad; Hou, Jin; Mandani, Faiz; Torma, Andrew; Zhang, Hao; et al (June 2024, Science)

   We present a design strategy for fabricating ultrastable phase-pure films of formamidinium lead iodide (FAPbI₃) by lattice templating using specific two-dimensional (2D) perovskites with FA as the cage cation. When a pure FAPbI₃precursor solution is brought in contact with the 2D perovskite, the black phase forms preferentially at 100°C, much lower than the standard FAPbI₃annealing temperature of 150°C. X-ray diffraction and optical spectroscopy suggest that the resulting FAPbI₃film compresses slightly to acquire the (011) interplanar distances of the 2D perovskite seed. The 2D-templated bulk FAPbI₃films exhibited an efficiency of 24.1% in a p-i-n architecture with 0.5–square centimeter active area and an exceptional durability, retaining 97% of their initial efficiency after 1000 hours under 85°C and maximum power point tracking. 

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5. Nitride perovskite becomes polar

   https://doi.org/10.1126/science.abm7179  

   Hong, Xia (December 2021, Science)

   There is a strong drive behind the quest for thin-film materials that are oxygen-free and polar. Oxygen hinders the integration of ferroelectric oxides with semiconductors, which affects efforts to develop nonvolatile memory—that is, a memory that can sustain its information without power. Ideally, one would use single-crystalline perovskite films to construct these devices so that the polarization can be maximized. However, when depositing crystalline polar perovskite oxides onto silicon or germanium, a nonpolar oxide buffer layer ( 1 ) or a native oxide layer ( 2 ) can be present at the interface, compromising device performance. A nitrogen-based perovskite may overcome this limitation ( 3 ). On page 1488 of this issue, Talley et al. ( 4 ) report the synthesis of lanthanum tungsten nitride (LaWN 3 ) thin films, which marks the first demonstration of polar nitride perovskite. This may lead to oxygen-free integration of functional perovskite on a semiconductor platform. 

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