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Abstract New deposition techniques for amorphous oxide semiconductors compatible with silicon back end of line manufacturing are needed for 3D monolithic integration of thin‐film electronics. Here, three atomic layer deposition (ALD) processes are compared for the fabrication of amorphous zinc tin oxide (ZTO) channels in bottom‐gate, top‐contact n‐channel transistors. As‐deposited ZTO films, made by ALD at 150–200 °C, exhibit semiconducting, enhancement‐mode behavior with electron mobility as high as 13 cm2V−1s−1, due to a low density of oxygen‐related defects. ZTO deposited at 200 °C using a hybrid thermal‐plasma ALD process with an optimal tin composition of 21%, post‐annealed at 400 °C, shows excellent performance with a record high mobility of 22.1 cm2V–1s–1and a subthreshold slope of 0.29 V dec–1. Increasing the deposition temperature and performing post‐deposition anneals at 300–500 °C lead to an increased density of the X‐ray amorphous ZTO film, improving its electrical properties. By optimizing the ZTO active layer thickness and using a high‐kgate insulator (ALD Al2O3), the transistor switching voltage is lowered, enabling electrical compatibility with silicon integrated circuits. This work opens the possibility of monolithic integration of ALD ZTO‐based thin‐film electronics with silicon integrated circuits or onto large‐area flexible substrates.
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This content will become publicly available on December 5, 2025
High performance AlGaN/GaN MISHEMTs using N 2 O treated TiO 2 as the gate dielectric
Abstract In this work, TiO2thin films deposited by the atomic layer deposition (ALD) method were treated with a special N2O plasma surface treatment and used as the gate dielectric for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The N2O plasma surface treatment effectively reduces defects in the oxide during low-temperature ALD growth. In addition, it allows oxygen atoms to diffuse into the device cap layer to increase the barrier height and thus reduce the gate leakage current. These TiO2films exhibit a dielectric constant of 54.8 and a two-terminal current of 1.96 × 10−10A mm−1in 2μm distance. When applied as the gate dielectric, the AlGaN/GaN MISHEMT with a 2μm-gate-length shows a high on/off ratio of 2.59 × 108and a low subthreshold slope (SS) of 84 mV dec−1among all GaN MISHEMTs using TiO2as the gate dielectric. This work provides a feasible way to significantly improve the TiO2film electrical property for gate dielectrics, and it suggests that the developed TiO2dielectric is a promising high-κgate oxide and a potential passivation layer for GaN-based MISHEMTs, which can be further extended to other transistors.
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- Award ID(s):
- 2239302
- PAR ID:
- 10623882
- Publisher / Repository:
- IOP
- Date Published:
- Journal Name:
- Semiconductor Science and Technology
- Volume:
- 40
- Issue:
- 1
- ISSN:
- 0268-1242
- Page Range / eLocation ID:
- 015004
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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